Title:
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL WAFER
Document Type and Number:
WIPO Patent Application WO/2023/053476
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method and apparatus for producing a semiconductor crystal wafer, the method and apparatus being capable of easily and reliably producing a semiconductor crystal wafer of high quality. A method for producing an SiC wafer, which is a semiconductor crystal wafer, according to the present invention enables the achievement of an SiC wafer which is obtained by slicing an SiC ingot that has been ground into a cylindrical shape, with the surface of the SiC wafer being subjected to high accuracy grinding. This method for producing an SiC wafer comprises: a groove processing step (STEP 100 in Fig. 1); a cutting and polishing step (STEP 200 in Fig. 1); a first surface processing step (STEP 300 in Fig. 1); and a second surface processing step (STEP 400 in Fig. 1).
Inventors:
SAKAI SHINSUKE (JP)
CHIBA TETSUYA (JP)
CHIBA TETSUYA (JP)
Application Number:
PCT/JP2022/004211
Publication Date:
April 06, 2023
Filing Date:
February 03, 2022
Export Citation:
Assignee:
SUCCESS CO LTD (JP)
DRYCHEMICALS CO LTD (JP)
DRYCHEMICALS CO LTD (JP)
International Classes:
B24B7/22; B24B27/06; B28D5/04; H01L21/304
Foreign References:
| JP2018064030A | 2018-04-19 | |||
| JP2018075668A | 2018-05-17 | |||
| JP2010099808A | 2010-05-06 | |||
| JP2019188510A | 2019-10-31 |
Attorney, Agent or Firm:
TAKITA SABURO LAW OFFICE (JP)
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