Title:
METHOD AND APPARATUS FOR TEMPERATURE MEASUREMENT, AND THERMAL INFRARED IMAGE SENSOR
Document Type and Number:
WIPO Patent Application WO/2001/051902
Kind Code:
A1
Abstract:
At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.
Inventors:
KIMURA MITSUTERU (JP)
Application Number:
PCT/JP2001/000080
Publication Date:
July 19, 2001
Filing Date:
January 11, 2001
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
KIMURA MITSUTERU (JP)
KIMURA MITSUTERU (JP)
International Classes:
G01J1/42; G01J1/44; G01J5/20; G01J5/22; G01J5/48; G01K7/01; H01L27/14; H01L27/146; H01L35/00; H04N5/33; (IPC1-7): G01J5/22; G01J5/48; G01K7/01; H01L27/14; H01L37/02
Foreign References:
| JPH11287713A | 1999-10-19 | |||
| JPH0936356A | 1997-02-07 | |||
| JPH0540064A | 1993-02-19 | |||
| EP0664554A1 | 1995-07-26 |
Other References:
M. KIMURA ET AL.: "Schottky barrier thermistor", TECHNICAL DIGEST OF THE 11TH SENSOR SYMPOSIUM, 1992, pages 107 - 110, XP002936708
See also references of EP 1248088A4
See also references of EP 1248088A4
Attorney, Agent or Firm:
Hashizume, Takeshi (Ginza 3-chome Chuo-ku, Tokyo, JP)
Download PDF: