Title:
METHOD OF CHEMICAL MECHANICAL POLISHING A SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/147891
Kind Code:
A1
Abstract:
A method of polishing a substrate comprises the steps of: providing the substrate which contains titanium nitride and titanium; providing a chemical mechanical polishing composition which contains: water, an oxidizing agent, a linear polyalkylenimine polymer, a colloidal silica abrasive with a positive surface charge, a carboxylic acid, a source of ferric ions and an optional pH adjusting agent; providing a chemical mechanical polishing pad with a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; and polishing away at least some of the titanium nitride and at least some of the titanium. This polishing method has a high removal rate of titanium and titanium nitride.
Inventors:
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
Application Number:
PCT/CN2016/075579
Publication Date:
September 08, 2017
Filing Date:
March 04, 2016
Export Citation:
Assignee:
ROHM & HAAS ELECT MATERIALS CMP HOLDINGS INC (US)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
International Classes:
C09G1/02
Domestic Patent References:
| WO2007125224A1 | 2007-11-08 |
Foreign References:
| US5756398A | 1998-05-26 | |||
| CN101490203A | 2009-07-22 | |||
| CN102863902A | 2013-01-09 | |||
| CN1787895A | 2006-06-14 | |||
| US20150259572A1 | 2015-09-17 |
Attorney, Agent or Firm:
SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC (CN)
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