Title:
METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/147768
Kind Code:
A1
Abstract:
A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; an allylamine additive; a carboxylic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein the tungsten (W) is selectively polished away from the substrate relative to the titanium (Ti).
Inventors:
HO LIN-CHEN (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
Application Number:
PCT/CN2016/075071
Publication Date:
September 08, 2017
Filing Date:
March 01, 2016
Export Citation:
Assignee:
ROHM & HAAS ELECT MATERIALS CMP HOLDINGS INC (US)
HO LIN-CHEN (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
HO LIN-CHEN (CN)
TSAI WEI-WEN (CN)
LEE CHENG-PING (CN)
WANG JIUN-FANG (CN)
International Classes:
C09G1/02; C09G1/00; C09G1/04; C09K3/14
Domestic Patent References:
| WO2005097930A2 | 2005-10-20 |
Foreign References:
| CN103270129A | 2013-08-28 | |||
| CN102766407A | 2012-11-07 | |||
| JP2015189784A | 2015-11-02 |
Attorney, Agent or Firm:
SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC (CN)
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