Title:
METHOD FOR CLEANING DEPOSITION CHAMBER FOR METAL OXIDE SEMICONDUCTOR MATERIAL
Document Type and Number:
WIPO Patent Application WO/2022/154240
Kind Code:
A1
Abstract:
A cleaning method of the present invention is a method for cleaning a deposition chamber for depositing a metal oxide semiconductor material, characterized by comprising: an activation step of activating a plurality of chlorine-based gases including a first chlorine-based gas and a second chlorine-based gas; and a cleaning step of cleaning the deposition chamber by a radical of the plurality of chlorine-based gases generated in the activation step, wherein the radical comprises: a first chlorine-based radical generated from the first chlorine-based gas and reacting with the metal oxide semiconductor material; and a second chlorine-based radical generated from the second chlorine-based gas and reacting with the metal oxide semiconductor material, the second chlorine-based radical being different from the first chlorine-based radical, and wherein in the activation step, the flow rate ratio of the first chlorine-based gas and the second chlorine-based gas is controlled such that the product of the concentrations of the first chlorine-based radical and the second chlorine-based radical is maximized.
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Inventors:
KWAK JUNG HUN (KR)
KWON BYUNG HYANG (KR)
CHO YONG JUN (KR)
KIM YOUNG BOM (KR)
LEE JIN HEE (KR)
LEE SANG KI (KR)
KWON BYUNG HYANG (KR)
CHO YONG JUN (KR)
KIM YOUNG BOM (KR)
LEE JIN HEE (KR)
LEE SANG KI (KR)
Application Number:
PCT/KR2021/017073
Publication Date:
July 21, 2022
Filing Date:
November 19, 2021
Export Citation:
Assignee:
SK SPECIALTY CO LTD (KR)
International Classes:
C23C16/44; C23C16/40; H01J37/32; H01L21/02
Foreign References:
| KR20170081554A | 2017-07-12 | |||
| KR20050050579A | 2005-05-31 | |||
| KR20070097875A | 2007-10-05 | |||
| KR20130061075A | 2013-06-10 | |||
| JP2019041124A | 2019-03-14 |
Attorney, Agent or Firm:
JI, Sang Hyup (KR)
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