Title:
METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE, AND COMPOSITION FOR EXFOLIATION AND DISSOLUTION
Document Type and Number:
WIPO Patent Application WO/2023/042813
Kind Code:
A1
Abstract:
Provided are: a method for cleaning a semiconductor substrate having an adhesive layer on the surface thereof, in which removal (cleaning) can be performed in a shorter period of time and more thoroughly via a simple operation; a method for manufacturing a processed semiconductor substrate, comprising such a cleaning method; and a composition for use in such a cleaning method. The method for cleaning a semiconductor substrate comprises a step for exfoliating and dissolving an adhesive layer on the semiconductor substrate using a composition for exfoliation and dissolution, wherein the composition for exfoliation and dissolution contains component [I]: a quaternary ammonium salt, component [II]: an amide-based solvent, and component [III]: a solvent represented by formula (L). (In the formula, L represents a substituent substituted on a benzene ring and each independently represents a C1-4 alkyl group, and k represents the number of L and is an integer of 0-5.)
Inventors:
YAGYU MASAFUMI (JP)
OKUNO TAKAHISA (JP)
SHINJO TETSUYA (JP)
OKUNO TAKAHISA (JP)
SHINJO TETSUYA (JP)
Application Number:
PCT/JP2022/034149
Publication Date:
March 23, 2023
Filing Date:
September 13, 2022
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
H01L21/304; C09D9/04; C09J7/35; C09J183/05; C09J183/07; C11D7/24; C11D7/32; C11D7/50; H01L21/02
Domestic Patent References:
| WO2020166703A1 | 2020-08-20 |
Foreign References:
| JP2014096449A | 2014-05-22 | |||
| JP2021082738A | 2021-05-27 |
Attorney, Agent or Firm:
TAKAOKA Ryoichi et al. (JP)
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