Title:
METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE, AND PEELING AND DISSOLVING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2023/042811
Kind Code:
A1
Abstract:
Provided are: a method for cleaning a semiconductor substrate by which it is possible to remove (clean), in a shorter time and more cleanly by a simple operation, an adhesive layer obtained by using, for example, a siloxane-based adhesive, from a surface of semiconductor substrate; a method for producing a processed semiconductor substrate, the method comprising such a cleaning method; and a composition to be used in such a cleaning method. The present invention is a method for cleaning a semiconductor substrate, the method comprising a step for peeling and dissolving an adhesive layer on a semiconductor substrate by using a peeling and dissolving composition, the method for cleaning a semiconductor substrate being characterized in that the peeling and dissolving composition comprises component (I): a quaternary ammonium salt, component (II): an amide-based solvent, and component (III): a solvent represented by formula (L). (In the formula, L1 and L2 each independently represent an alkyl group with 2-5 carbons, and L3 represents O or S.)
Inventors:
YAGYU MASAFUMI (JP)
OKUNO TAKAHISA (JP)
SHINJO TETSUYA (JP)
OKUNO TAKAHISA (JP)
SHINJO TETSUYA (JP)
Application Number:
PCT/JP2022/034143
Publication Date:
March 23, 2023
Filing Date:
September 13, 2022
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
H01L21/304; C09D9/04; C09J7/35; C09J183/05; C09J183/07; C11D7/26; C11D7/32; C11D7/50; H01L21/02
Domestic Patent References:
| WO2021106460A1 | 2021-06-03 | |||
| WO2021100651A1 | 2021-05-27 | |||
| WO2020166702A1 | 2020-08-20 |
Foreign References:
| JP2017011279A | 2017-01-12 |
Attorney, Agent or Firm:
TAKAOKA Ryoichi et al. (JP)
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