Title:
METHOD FOR CLEANING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2019/035345
Kind Code:
A1
Abstract:
The present invention is a method for cleaning a silicon wafer, the method comprising, in the following order: a step for supplying hydrofluoric acid onto the surface of a silicon wafer while rotating the silicon wafer at a first rotation speed; a step for stopping the supply of hydrofluoric acid and shaking off the hydrofluoric acid present on the surface of the silicon wafer while rotating the silicon wafer at a second rotation speed equal to or higher than the first rotation speed without supplying pure water onto the surface of the silicon wafer; and a step for supplying ozone water onto the silicon wafer surface, from which hydrofluoric acid was shaken off, while rotating the silicon wafer at a third rotation speed equal to or higher than the second rotation speed. Accordingly, the present invention provides a method for cleaning a silicon wafer, the method capable of improving wafer quality by suppressing watermarks or the adhesion of particles.
Inventors:
IGARASHI KENSAKU (JP)
ABE TATSUO (JP)
ABE TATSUO (JP)
Application Number:
PCT/JP2018/028519
Publication Date:
February 21, 2019
Filing Date:
July 31, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/304
Foreign References:
| JP2012004450A | 2012-01-05 | |||
| JP2012074475A | 2012-04-12 | |||
| JP2013123001A | 2013-06-20 | |||
| JP2012129409A | 2012-07-05 | |||
| US20060011214A1 | 2006-01-19 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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