Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD FOR COMPLETELY ELIMINATING CHARGE TRAP FROM THE SOURCE (OR DRAIN) AND THE BULK REGION OF A VERTICAL TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2010/018912
Kind Code:
A1
Abstract:
This invention relates to a method for completely eliminating charge trap from the source (or drain) and the bulk region of a vertical transistor, in order to drastically improve the switching characteristics and the performance thereof. The method according to the present invention comprises the following steps; a) a step wherein an impurity is applied to the front of the substrate to form the source/channel/drain, and the impurity is activated; b) a step wherein a pillar or a silicon pole is established on the front of said substrate by using a photoresist pattern and a dry etching method; c) a step wherein oxide is deposited on the front of said substrate using a CVD method, and a step wherein wide uniformity is established using the CMP method; d) a step wherein the gate terminal is formed by etching back until the drain is exposed; e) a step wherein an oxide or nitride film is deposited, wide uniformity is established, and a contact hole is established using the CMP process and f) a step wherein the contact metal is established by etching back and establishing the metal layer using a photoresist pattern and a dry etching method.

Inventors:
LEE, Wan Gyu (#501, Dreamville243-21 Junggok-dong,Gwangjin-gu, Seoul 143-220, 143-220, KR)
Application Number:
KR2009/002095
Publication Date:
February 18, 2010
Filing Date:
April 22, 2009
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, 305-701, KR)
한국과학기술원 (대전 유성구 구성동 373-1, 305-701 Daejeon, 305-701, KR)
International Classes:
H01L29/78
Foreign References:
JPH11214684A
KR20020076386A
US20070148939A1
KR100618875B1
Attorney, Agent or Firm:
HWANG, E-Nam (6F Koita Bldg, 20-17 Yangjae-dong Seocho-gu, Seoul 137-888, 137-888, KR)
Download PDF: