A METHOD FOR CONTROLLING THE DEPOSITION RATE OF THIN FILMS IN A VACUUM MULTI-NOZZLE PLASMA SYSTEM AND A DEVICE FOR PERFORMING OF THE METHOD

Title:

A METHOD FOR CONTROLLING THE DEPOSITION RATE OF THIN FILMS IN A VACUUM MULTI-NOZZLE PLASMA SYSTEM AND A DEVICE FOR PERFORMING OF THE METHOD

Document Type and Number:

WIPO Patent Application WO/2018/059609

Kind Code:

A1

Abstract:

A method of controlling deposition rate of a film deposition in a vacuum multi-plasma-jet system utilizing plasma-chemical reactions in an active discharge zone, wherein the system comprises at least one series of plasma nozzles (4), the working tubes of which (42) are terminated by a hollow cathode whose mouth is located in the vicinity of the top area of the holding system (2) with the stored substrate (3), wherein the principle of the solution consists in the deposition of the thin film on the substrate (3) after the individual ignition of the discharges in each plasma nozzle (4) and in the control of their parameters by means of external sources (6) of voltage, the temperature of each hollow cathode (44) is monitored by means (8) of contactless temperature measurement and based on the evaluation of the measured temperature values, the settings of the discharge parameters is provided, with help of an control unit (9), in particular it is regulated the effective current in each of the plasma nozzles (4) so that the deposition rates of all the hollow cathodes (44) of the plasma nozzles (4) are the same. The essence of the invention is also a device to provide a method for controlling the deposition rate.

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Inventors:

OLEJNICEK JIRI (CZ)
SMID JIRI (CZ)
HUBICKA ZDENEK (ZA)
ADAMEK PETR (CZ)
CADA MARTIN (CZ)
KMENT STEPAN (CZ)

Application Number:

PCT/CZ2017/050044

Publication Date:

April 05, 2018

Filing Date:

September 27, 2017

Export Citation:

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Assignee:

FYZIKALNI USTAV AV CR V V I (CZ)

International Classes:

C23C14/00; H01J37/317

Domestic Patent References:

WO2010099218A1	2010-09-02
WO2002043466A2	2002-06-06

Foreign References:

JP2013072100A	2013-04-22
JP2006131929A	2006-05-25

Other References: