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Patent Searching and Data


Title:
METHOD FOR CORRECTING OHMIC CONTACT REGION SHEET RESISTANCE
Document Type and Number:
WIPO Patent Application WO/2018/223968
Kind Code:
A1
Abstract:
The present invention relates to the technical field of testing and discloses a method for correcting ohmic contact region sheet resistance. The method comprises: calculating a resistance value RL1 between a circular ohmic electrode A1 and a second circular-ring-shaped ohmic electrode A3; calculating a resistance value RL2 between a circular ohmic electrode B1 and a second circular-ring-shaped ohmic electrode B3; and constructing, according to the resistance RL1 and the resistance RL2, an ohmic contact region sheet resistance correction formula. The method resolves the issue of an existing rectangular transmission line model (TLM) in which an error is caused when an ohmic contact region sheet resistance Rshc approximates an active region sheet resistance Rsh and the further issue therein of low test accuracy caused by the current leakage of a mesa, and moreover simplifies the complex mathematical calculations of a conventional circular transmission line model (CTLM) and reduces the large number of test patterns thereof, and quickly and accurately indicates ohmic contact region sheet resistance Rshc.

Inventors:
ZHENG XUEFENG (CN)
MA XIAOHUA (CN)
HAO YUE (CN)
DONG SHUAISHUAI (CN)
JI PENG (CN)
WANG YINGZHE (CN)
TANG ZHENLING (CN)
WANG CHONG (CN)
WANG SHIHUI (CN)
Application Number:
PCT/CN2018/089988
Publication Date:
December 13, 2018
Filing Date:
June 05, 2018
Export Citation:
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Assignee:
UNIV XIDIAN (CN)
International Classes:
H01L21/66
Foreign References:
CN107248496A2017-10-13
CN101183642A2008-05-21
US20030129813A12003-07-10
CN101021558A2007-08-22
CN102735939A2012-10-17
Attorney, Agent or Firm:
XI'AN JUST IP FIRM (CN)
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