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Patent Searching and Data


Title:
METHOD FOR CUTTING OBJECT TO BE PROCESSED
Document Type and Number:
WIPO Patent Application WO/2011/013556
Kind Code:
A1
Abstract:
Since the principal surface of a silicon substrate (12) is (100) surface, a crack (17) generated starting from a melt treatment region (13) extends in the cleavage direction of the silicon substrate (12) (direction orthogonal to the principal surface of the silicon substrate (12)). In this case, since the back surface (1b) of an object (1A) to be processed and the front surface (10a) of an object (10A) to be processed for separation are bonded by anodic bonding, the crack (17) reaches the front surface (1a) of the object (1A) to be processed in a continuous fashion and without almost changing the direction thereof. In addition, when a stress is generated in the object (10A) to be processed for separation, since the crack (17) reaches the back surface (10b) of the object (10A) to be processed for separation, the crack (17) easily extends on the side of the object (1A) to be processed.

Inventors:
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
下井 英樹 (〒58 静岡県浜松市東区市野町1126番地の1 浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
UCHIYAMA Naoki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
Application Number:
JP2010/062250
Publication Date:
February 03, 2011
Filing Date:
July 21, 2010
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS K.K. (1126-1, Ichino-cho Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
浜松ホトニクス株式会社 (〒58 静岡県浜松市東区市野町1126番地の1 Shizuoka, 〒4358558, JP)
SHIMOI Hideki (1126-1 Ichino-cho, Higashi-ku, Hamamatsu-sh, Shizuoka 58, 〒4358558, JP)
下井 英樹 (〒58 静岡県浜松市東区市野町1126番地の1 浜松ホトニクス株式会社内 Shizuoka, 〒4358558, JP)
International Classes:
B28D5/00; B23K26/00; B23K26/38; B23K26/40; H01L21/301
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl.1-1, Marunouchi 2-chom, Chiyoda-ku Tokyo 05, 〒1000005, JP)
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