Title:
METHOD FOR CUTTING OBJECT TO BE PROCESSED
Document Type and Number:
WIPO Patent Application WO/2011/013556
Kind Code:
A1
Abstract:
Since the principal surface of a silicon substrate (12) is (100) surface, a crack (17) generated starting from a melt treatment region (13) extends in the cleavage direction of the silicon substrate (12) (direction orthogonal to the principal surface of the silicon substrate (12)). In this case, since the back surface (1b) of an object (1A) to be processed and the front surface (10a) of an object (10A) to be processed for separation are bonded by anodic bonding, the crack (17) reaches the front surface (1a) of the object (1A) to be processed in a continuous fashion and without almost changing the direction thereof. In addition, when a stress is generated in the object (10A) to be processed for separation, since the crack (17) reaches the back surface (10b) of the object (10A) to be processed for separation, the crack (17) easily extends on the side of the object (1A) to be processed.
Inventors:
SHIMOI HIDEKI (JP)
UCHIYAMA NAOKI (JP)
KAWAGUCHI DAISUKE (JP)
UCHIYAMA NAOKI (JP)
KAWAGUCHI DAISUKE (JP)
Application Number:
PCT/JP2010/062250
Publication Date:
February 03, 2011
Filing Date:
July 21, 2010
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
SHIMOI HIDEKI (JP)
UCHIYAMA NAOKI (JP)
KAWAGUCHI DAISUKE (JP)
SHIMOI HIDEKI (JP)
UCHIYAMA NAOKI (JP)
KAWAGUCHI DAISUKE (JP)
International Classes:
B28D5/00; B23K26/38; B23K26/40; H01L21/301
Domestic Patent References:
| WO2005098916A1 | 2005-10-20 | |||
| WO2003076120A1 | 2003-09-18 |
Foreign References:
| JP2007118207A | 2007-05-17 | |||
| JP2009023215A | 2009-02-05 | |||
| JP2005051055A | 2005-02-24 | |||
| JP2008153337A | 2008-07-03 |
Other References:
"Silicon Processing Characteristic Evaluation by Picosecond Pulse Laser", PREPRINTS OF THE NATIONAL MEETINGS OF JAPAN WELDING SOCIETY, vol. 66, April 2000 (2000-04-01), pages 72 - 73
D. DU; ET AL: "Laser Induced Breakdown by Impact Ionization in Si02 with Pulse Widths from 7 ns to 150 fs", APPL. PHYS. LETT., vol. 64, no. 23, 6 June 1994 (1994-06-06)
See also references of EP 2460634A4
D. DU; ET AL: "Laser Induced Breakdown by Impact Ionization in Si02 with Pulse Widths from 7 ns to 150 fs", APPL. PHYS. LETT., vol. 64, no. 23, 6 June 1994 (1994-06-06)
See also references of EP 2460634A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
Download PDF:
Previous Patent: GLASS RIBBON AND PROCESS FOR PRODUCTION THEREOF
Next Patent: ALLYLAMINE MANUFACTURING METHOD
Next Patent: ALLYLAMINE MANUFACTURING METHOD