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Title:
METHOD FOR CUTTING SILICON INGOT, METHOD FOR MANUFACTURING SILICON WAFER, AND SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2018/025539
Kind Code:
A1
Abstract:
Proposed is a method for suppressing contamination by nickel to less than the detection limit when cutting a silicon ingot having a diameter exceeding 300 mm using a fixed abrasive wire saw. A method for feeding a silicon ingot having a diameter exceeding 300 mm so as to press the silicon ingot against at least one fixed abrasive wire saw in which a plurality of abrasive grains are fixed onto the surface of a wire while running the fixed abrasive wire saw, and cutting the silicon ingot, wherein the method is characterized in that the cutting of the silicon ingot is performed in a cutting time of 30 hours or less.

Inventors:
HASHIMOTO Daisuke (2-1 Shibaura 1-chom, Minato-ku Tokyo 34, 〒1058634, JP)
TAJIRI Tomoaki (2-1 Shibaura 1-chom, Minato-ku Tokyo 34, 〒1058634, JP)
MATAGAWA Satoshi (2-1 Shibaura 1-chom, Minato-ku Tokyo 34, 〒1058634, JP)
NAKASHIMA Akira (2-1 Shibaura 1-chom, Minato-ku Tokyo 34, 〒1058634, JP)
ETOU Yoshihiro (2-1 Shibaura 1-chom, Minato-ku Tokyo 34, 〒1058634, JP)
Application Number:
JP2017/023606
Publication Date:
February 08, 2018
Filing Date:
June 27, 2017
Export Citation:
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Assignee:
SUMCO CORPORATION (2-1 Shibaura 1-chome, Minato-ku Tokyo, 34, 〒1058634, JP)
International Classes:
H01L21/304; B24B27/06; B28D5/04
Attorney, Agent or Firm:
SUGIMURA Kenji (36F Kasumigaseki Common Gate West, 3-2-1 Kasumigasek, Chiyoda-ku Tokyo 13, 〒1000013, JP)
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