Title:
METHOD FOR CUTTING SILICON INGOT
Document Type and Number:
WIPO Patent Application WO/2010/137228
Kind Code:
A1
Abstract:
Provided is a method for cutting a silicon ingot, with which the waste slurry generated when a silicon ingot is cut by a wire saw is subjected to primary centrifugation and separated into a primary separated liquid and a solid component, at least some of the primary separated liquid is subjected to secondary centrifugation and separated into waste sludge and a secondary separated liquid, the secondary separated liquid and solid component are recovered, fresh abrasive grains and fresh coolant are added to prepare regenerated slurry, and the regenerated slurry is fed to the wire saw as the saw cuts a silicon ingot. During the secondary centrifugation, the secondary separated liquid is recovered in an amount that is at least 50 mass% of the primary separated liquid, and the regenerated slurry is prepared to a silicon concentration of 6 mass% or less and fed to the wire saw. The regenerated slurry that reuses the abrasive grains and coolant recovered from the waste slurry is fed to the wire saw as a silicon ingot is being cut and as a result it is possible to prevent a reduction in cutting quality and to improve yield, and thereby control costs.
Inventors:
ICHIKAWA, Shinnosuke (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
市川進之介 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
SHIBUI, Miyoshi (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
渋井美芳 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
MASUZAWA, Seiji (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
市川進之介 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
SHIBUI, Miyoshi (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
渋井美芳 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
MASUZAWA, Seiji (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
Application Number:
JP2010/002682
Publication Date:
December 02, 2010
Filing Date:
April 14, 2010
Export Citation:
Assignee:
Shin-Etsu Handotai Co., Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
ICHIKAWA, Shinnosuke (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
市川進之介 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
SHIBUI, Miyoshi (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
渋井美芳 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
ICHIKAWA, Shinnosuke (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
市川進之介 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
SHIBUI, Miyoshi (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
渋井美芳 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
International Classes:
H01L21/304; B24B27/06; B24B57/02; B28D5/04; B28D7/02
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (1st Shitaya Bldg. 8F, 6-11 Ueno 7-chome, Taito-k, Tokyo 05, 〒1100005, JP)
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