Title:
METHOD FOR CUTTING SILICON INGOT
Document Type and Number:
WIPO Patent Application WO/2013/128653
Kind Code:
A1
Abstract:
[Problem] To provide a method that is for cutting a silicon ingot and that can, without using an abrasive grit, efficiently cut a silicon ingot (2) by means of a simple process and can cause a silicon wafer to become a thin film and to have reduced damage to the surface thereof. [Solution] In the state of supplying an etching liquid (6) to a metal wire (4), the metal wire (4) is caused to travel while being pressed against a silicon ingot (2), by which means the silicon ingot (2) is cut.
Inventors:
MURATA JUNJI (JP)
KIRINO OKIHARU (JP)
KIRINO OKIHARU (JP)
Application Number:
PCT/JP2012/058812
Publication Date:
September 06, 2013
Filing Date:
April 02, 2012
Export Citation:
Assignee:
CRYSTAL OPTICS CO LTD (JP)
TOOL BANK EAST CO LTD (JP)
RITSUMEIKAN TRUST (JP)
MURATA JUNJI (JP)
KIRINO OKIHARU (JP)
TOOL BANK EAST CO LTD (JP)
RITSUMEIKAN TRUST (JP)
MURATA JUNJI (JP)
KIRINO OKIHARU (JP)
International Classes:
H01L21/304; B24B27/06; B28D5/04
Foreign References:
| US4343662A | 1982-08-10 | |||
| JP2009142986A | 2009-07-02 | |||
| JPH02298280A | 1990-12-10 | |||
| JP2012015181A | 2012-01-19 | |||
| JP2007305644A | 2007-11-22 | |||
| JP2005112917A | 2005-04-28 |
Attorney, Agent or Firm:
WATANABE MITSUHIKO (JP)
Mitsuhiko Watanabe (JP)
Mitsuhiko Watanabe (JP)
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Claims: