Title:
METHOD FOR DEPOSITING HIGH-QUALITY MICROCRYSTALLINE SEMICONDUCTOR MATERIALS
Document Type and Number:
WIPO Patent Application WO2005072302
Kind Code:
A3
Abstract:
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
Inventors:
GUHA SUBHENDU (US)
YANG CHI C (US)
YAN BAOJIE (US)
YANG CHI C (US)
YAN BAOJIE (US)
Application Number:
PCT/US2005/002165
Publication Date:
November 23, 2006
Filing Date:
January 24, 2005
Export Citation:
Assignee:
UNITED SOLAR SYSTEMS CORP (US)
GUHA SUBHENDU (US)
YANG CHI C (US)
YAN BAOJIE (US)
GUHA SUBHENDU (US)
YANG CHI C (US)
YAN BAOJIE (US)
International Classes:
H01L21/20; C23C16/24; C23C16/455; H01L21/205; H01L31/18; H01L31/20
Foreign References:
| US6274461B1 | 2001-08-14 |
Other References:
See also references of EP 1743360A4
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