TECHNICAL FIELD

[0001 ] Embodiments of the present disclosure relate to a deposition of material on a substrate. Embodiments of the present disclosure particularly relate to deposition of material on a substrate by facing target sputtering.

BACKGROUND

[0002] Deposition of material on a substrate has many applications in various technical fields. Sputtering is a method for deposition of a material on a substrate. Sputtering can be associated with a bombardment of the substrate, particularly a film located on the substrate, with energetic particles. The bombardment may have a disadvantageous influence on the properties of a material, particularly a film, located on the substrate. To avoid the bombardment, facing target sputtering (FTS) systems were devised, for example, with planar targets. In an FTS system, instead of facing the substrate directly, targets face each other. However, the stability of the sputtering plasma in conventional FTS systems is limited. The suitability of conventional FTS systems for the use in mass production is impaired. Further, conventional FTS systems are associated with low deposition rates, leading to low productivity and the risk of substrate surface contamination.

[0003] In view of the above, it is beneficial to provide improved methods of depositing a material on a substrate.

SUMMARY

[0004] According to an embodiment, a method of depositing a material on a substrate is provided. The method includes sputtering at least a component of the material from a first rotary target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement in a first direction facing towards a second rotary target, at least three magnetic poles of the first magnet assembly facing the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction facing towards a third rotary target, at least three magnetic poles of the second magnet assembly facing the second plasma confinement.

[0005] According to an embodiment, a system for depositing a material is provided. The system includes a first, a second, and a third rotary target, the first rotary target including a first magnet assembly and a second magnet assembly. The system is configured such that during deposition of the material, the first magnet assembly provides a first plasma confinement in a first direction facing towards the second rotary target, at least three magnetic poles of the first magnet assembly facing the first plasma confinement and the second magnet assembly provides a second plasma confinement in a second direction facing towards the third rotary target, at least three magnetic poles of the second magnet assembly facing the second plasma confinement.

[0006] The present disclosure is to be understood as encompassing apparatuses and systems for carrying out the disclosed methods, including apparatus parts for performing each described method aspect. Method aspects may be performed for example by hardware components, by a computer programmed by appropriate software or by any combination of the two. The present disclosure is also to be understood as encompassing methods for operating described apparatuses and systems. Methods for operating the described apparatuses and systems include method aspects for carrying out every function of the respective apparatus or system.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] So that the features recited above can be understood in detail, a more particular description of the subject matter briefly summarized above may be provided below by reference to embodiments. The accompanying drawings relate to embodiments and are described in the following:

FIGS. 1A-C are schematic, cross-sectional views of systems for depositing a material, according to embodiments described herein; FIG. 2 is a schematic, cross-sectional view of a system for depositing a material, according to embodiments described herein;

FIG. 3 is a schematic, cross-sectional view of a system for depositing a material, according to embodiments described herein;

FIG. 4 is a chart illustrating a method of depositing a material on a substrate, according to embodiments described herein.

DETAILED DESCRIPTION OF EMBODIMENTS

[0008] Reference will now be made in detail to the various embodiments, wherein one or more examples of the embodiments are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided as an explanation and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0009] FIGS. 1 A-C are schematic, cross-sectional views of systems for depositing a material, according to embodiments described herein. The system 100 shown in FIG. 1 A includes a first rotary target 110 having a first magnet assembly 112 and a second magnet assembly 116. The first magnet assembly 112 and the second magnet assembly 116 are both positioned within the first rotary target 110. The first and the second magnet assembly can face, particularly be operated to face, opposite sides of the first rotary target 110.

[0010] The system further includes a second rotary target 130 and a third rotary target 150. The first rotary target 110 can be operated such that the first magnet assembly 112 of the first rotary target 110 faces the second rotary target 130. The first rotary target can be operated such that the second magnet assembly 116 of the first rotary target 110 faces the third rotary target 150.

[0011] As shown in the depicted example, the first magnet assembly 112 of the first rotary target can provide a first plasma confinement 120 in a first direction facing towards the second rotary target 130, particularly during deposition of the material. The second magnet assembly 116 of the first rotary target 110 can provide a second plasma confinement 122 in a second direction facing towards the third rotary target, particularly during deposition of the material.

[0012] In embodiments, for example as depicted in FIG. 1A, the second rotary target 130 and the third rotary target 150 can have at least substantially the same structure as the first rotary target 110. A magnet assembly of the second rotary target 130 may provide a third plasma confinement 140 in a direction facing towards the first rotary target 110.

[0013] Plasma associated with the sputter deposition may be trapped between the first and the second rotary target. The first plasma confinement 120 and the third plasma confinement 140 may overlap at least partially. In particular, the first and the second rotary target are neighboring targets. More particularly, there are no further targets positioned in a region between the first and the second rotary target.

[0014] Analogously, a magnet assembly of the third rotary target 150 may provide a fourth plasma confinement 160 in a direction facing towards the first rotary target 110. The structural relationship between the third rotary target 150 and the first rotary target 110 may be analogous to the relationship between the second rotary target 130 and the first rotary target 110 described above.

[0015] In the context of the present disclosure, a plasma confinement is particularly to be understood as a plasma confinement region. A plasma confinement region may be understood as a region where the amount of plasma is increased relative to the environment, particularly due to the effect of a magnetic field associated with a magnet assembly of a rotary target. In the context of the present disclosure, providing a plasma confinement in a direction is particularly to be understood as providing the plasma confinement such that a main direction of the plasma confinement extends in that direction. Particularly in embodiments where the magnet assembly includes a permanent magnet, providing a plasma confinement in a direction facing a rotary target may be understood as providing the magnet assembly at a position such that the magnet assembly faces the rotary target, e.g. a neighboring rotary target, i.e. the symmetry axis of the magnet assembly facing in the direction. According to some embodiments of the present disclosure, a plasma confinement is provided in a plasma racetrack, particularly a closed plasma racetrack. The plasma confinement associated with one magnetron or magnet assembly provides a closed loop. The closed loop may for example be provided at one target, i.e. the target in which the magnet assembly is provided.

[0016] Generally, a magnet assembly positioned within a rotary target may enable magnetron sputtering. As used herein, “magnetron sputtering” refers to sputtering performed using a magnetron, i.e. a magnet assembly. A magnet assembly is particularly to be understood as a unit capable of generating a magnetic field. A magnet assembly may include one or more permanent magnets. The permanent magnets may be arranged within a rotary target such that free electrons are trapped within the generated magnetic field, e.g. in a closed loop or a racetrack. The magnet assembly can be provided within a backing tube of the rotary target or within the target material tube. Each of the first, the second and the third rotary target may be a cathode or may be a portion of a cathode. The system may be configured for DC sputtering. In embodiments, the system may be configured for pulsed DC sputtering.

[0017] A rotary target is particularly to be understood as a rotatable sputtering target, such as a cylindrical sputtering target. In particular, the rotary target may be a rotatable cathode including a material to be deposited. The rotary target may be connected to a shaft configured to rotate in at least one operational state of the system. The rotary target may be connected to the shaft directly or indirectly via a connecting element. According to some embodiments, the rotary targets in a deposition chamber may be exchangeable. Replacement of the rotary targets after the material to be sputtered has been consumed may be made possible.

[0018] In embodiments, the system may be configured for sputtering of a transparent conductive oxide film. The system may be configured for deposition of materials like indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) or MoN. In embodiments, the system may be configured for deposition of metallic material like silver, magnesium silver (MgAg) aluminum, indium, indium tin (InSn), indium zinc (InZn), Gallium, gallium zinc (GaZn), niobium, alkali metals (like Li or Na), alkaline earth metals (like Mg or Ca), yttrium, lanthanum, lanthanides (like Ce, Nd, or Dy) and alloys of those materials. The system may be configured for deposition of electrodes, particularly transparent electrodes in displays, particularly OLED displays, liquid crystal displays, and touchscreens. More particularly, the system may be configured for deposition of top contacts for top-emitting OLEDs. In embodiments, the system may be configured for deposition of electrodes, particularly transparent electrodes in thin film solar cells, photodiodes, and smart or switchable glass. The system may be configured for sputtering transparent dielectrics used as charger generation layers. The system may be configured for deposition of materials like molybdenum oxide (MoO), or transition metal oxides like vanadium oxide (VO) or tungsten oxide (WOx), zirconium oxide (ZrO) or lanthanum oxide (LaO). The system may be configured for sputtering transparent dielectrics used for optical enhancement layers like silicon oxide (SiO), niobium oxide (NbO), titanium oxide (TiO), or tantalum oxide (TaO).

[0019] In embodiments, a target material of a rotary target can be selected from the group consisting of silver, aluminum, silicon, tantalum, molybdenum, niobium, titanium and copper. Particularly, the target material can be selected from the group consisting of IZO, ITO, silver, IGZO, aluminum, silicon, NbO, titanium, zirconium, and tungsten. The system may be configured to deposit the material via a reactive sputter process. In reactive sputter processes, typically oxides of the target materials are deposited. However, nitrides or oxy-nitrides might be deposited as well.

[0020] The feature that a plasma confinement of the first rotary target faces the second rotary target or the third rotary target may have the advantage that a soft deposition is achieved. For example, bombardment of the substrate with high energy particles may be reduced. Damage of the substrate, particularly of a coating on the substrate, may be mitigated. This is particularly advantageous regarding deposition on sensitive substrates or layers, more particularly deposition on substrates having a sensitive coating.

[0021] For example, when depositing electrodes of an OLED, the material may have to be deposited on a highly sensitive layer. For some materials, particularly transparent conductive oxides, soft evaporation with conventional technology may be impossible. Embodiments of the present disclosure employ a facing target design to solve this. By using rotary targets, in line with embodiments of the present disclosure, target surface contamination may be mitigated and system up-times may be increased. Further, via the soft deposition as described herein, a number of high-energy particles, like sputter particles, negative ions, and electrons impinging on the substrate may be reduced. A change of a temperature on or near the substrate surface may be reduced. In particular, a lower temperature on or near the substrate surface may be achieved. [0022] In conventional technology, facing target sputtering (FTS) setups using planar targets are known. A large amount of material is deposited on the neighboring target surface. Deposition of material on target surfaces may for example lead to nodule growth, subsequent arcing with particles, or flaking of deposited material, particularly of layers of deposited material, from the target. Long-term stability may be impaired, particularly such that an application in mass production is not feasible. Known FTS setups with planar targets may have an expected stability of less than one day. According to embodiments of the present disclosure, a plasma confinement of a first rotary target facing a second or a third rotary target has the advantage that material deposited on a surface of any of the rotary targets may be sputtered again, particularly before any nodule growth can occur. In known FTS setups with planar cathodes, only the small amount of material deposited on a race track of a planar cathode may be sputtered again. A stable FTS process for planar targets is difficult or impossible to achieve.

[0023] In rotary targets, the removal of material from the target during magnetron sputtering has an improved uniformity, when compared to magnetron sputtering from planar targets. The uniformity in the case of rotary targets is particularly caused by the movement of the target surface relative to the magnetic field due to the rotation of the targets. The amount of material collected on a target surface may be reduced or even eliminated. Arcing may be reduced or even eliminated. Material flaking may be reduced or eliminated. Stability, particularly longterm stability of the deposition process may be increased. Use of the FTS concept for mass production may be enabled. Collection efficiency may be increased, particularly due to the effect that an increased amount of material deposited on a target is sputtered again. Collection efficiency is particularly to be understood as the amount of a sputtered material captured by a substrate relative to the total amount of material emitted by a sputtering target. Material utilization may be increased. Material waste and costs may be reduced.

[0024] The feature that a first rotary target includes a first and a second magnet assembly, wherein the first magnet assembly provides a first plasma confinement in a first direction facing towards a second rotary target and the second magnet assembly provides a second plasma confinement in a second direction facing towards a third rotary target may be associated with an increased deposition rate. In particular, a deposition rate may be much higher, for example approximately two times higher, as compared to a system with rotary targets having only one magnet assembly. The increase stems particularly from a generation of two racetracks, more particularly two racetracks located on opposite sides of the target. [0025] In embodiments, the first magnet assembly includes at least three magnetic poles facing the first plasma confinement. The second magnet assembly may include at least three magnetic poles facing the second plasma confinement. In the embodiment shown in FIG. 1 A, the first magnet assembly 112 includes three magnetic poles 114 facing the first plasma confinement 120 and the second magnet assembly 116 includes three magnetic poles facing the second plasma confinement 122.

[0026] The increase in deposition rate due to the presence of two magnet assemblies in a rotary target, as described above, may be synergistically enabled or enhanced by the feature that a magnet assembly includes at least three magnetic poles facing the plasma confinement. Via a magnet assembly including three, particularly exactly three, magnetic poles facing a plasma confinement, a closed racetrack may be created on the rotary target.

[0027] In embodiments, the system 100 may be configured to deposit the material on a substrate 102. The system may further be configured such that the first direction and the second direction deviate from being parallel to a substrate plane by an angle of less than 40°. In the context of the present disclosure, the “substrate plane” particularly refers to a plane of the substrate 102 whereupon the material is deposited. In particular, the first and the second direction may deviate from being parallel to the substrate plane by an angle of for example less than 30°, 20° or 10°. An advantageous configuration may be achieved, wherein bombardment of the substrate with energetic particles is minimized, while at least a satisfactory amount of material is deposited on the substrate. If any of the first and the second direction would highly deviate from being parallel to the substrate plane in a direction towards the substrate, a disadvantageous bombardment of the substrate with energetic particles could ensue. If any of the first direction and the second direction would highly deviate from being parallel to the substrate plane in a direction away from the substrate, an unsatisfactorily low deposition rate on the substrate could ensue. Additionally or alternatively, a waste of target material could arise.

[0028] The first direction may correspond to a first angle, particularly a first polar angle of a polar coordinate system. The reference point, particularly the pole, of the polar coordinate system, may be positioned on a rotation axis of the rotary target. The reference direction of the polar coordinate system may be perpendicular to the rotation axis of the rotary target. The deviation of the first direction from being parallel to a substrate plane may refer to a polar coordinate system of the first rotary target. The deviation of the second direction from being parallel to a substrate plane may refer to a polar coordinate system of the second rotary target.

[0029] In embodiments, the system may be configured such that the first direction and the second direction deviate from being parallel to a substrate plane by an angle of less than 40°, 30° or 20° towards the substrate and by an angle of less than 10° away from the substrate.

[0030] In embodiments, magnets included in each of the system’s magnet assemblies may deviate from being parallel to each other. In other words, magnets of each of the system’s magnet assemblies may enclose an opening angle. In particular, at least one of the magnets may deviate from being parallel to the magnet assembly’s center axis or symmetry axis by an angle of more than for example 3, 6, or 10°. The at least one magnet may deviate from being parallel to the center axis or symmetry axis by an angle of less than for example 30, 25, or 15°.

[0031] In embodiments, for example as shown in FIGS. 1A-C, the second rotary target 130 includes a third magnet assembly 132 facing the first magnet assembly 112. The third rotary target 150 may include a fourth magnet assembly 152 facing the second magnet assembly 116.

[0032] Generally, each of the third magnet assembly’s magnetic poles facing the first magnet assembly 112 may have a same polarity as a respectively nearest magnetic pole of the first magnet assembly 112. Each of the fourth magnet assembly’s magnetic poles facing the second magnet assembly 116 may have a same polarity as a respectively nearest magnetic pole of the second magnet assembly 116. In other words, the facing magnet assemblies may have the same magnetic polarities.

[0033] Particularly in the embodiments depicted in FIGS. 1B-C, each of the third magnet assembly’s magnetic poles facing the first magnet assembly 112 may have an opposite polarity to a respectively nearest magnetic pole of the first magnet assembly 112. Each of the fourth magnet assembly’s magnetic poles facing the second magnet assembly 116 may have an opposite polarity to a respectively nearest magnetic pole of the second magnet assembly 116. In other words, the facing magnet assemblies may have opposing magnetic polarities with respect to each other.

[0034] In FIG. IB, possible resulting magnetic field lines between the rotary targets are indicated. Resulting regions of high plasma density between the rotary targets are indicated in FIG. 1C. Having facing magnet assemblies with opposing magnetic polarities with respect to each other is associated with the advantage that a magnetic field of a magnetic lens may be provided. In the magnetic field, charged particles may be deflected. A normal component with respect to a substrate surface of a momentum of charged particles may be reduced. The normal component of the momentum is responsible for the possible damage, particularly the possible depth of damage, caused by the charged particles to the substrate or the layer positioned on the substrate.

[0035] The gyration radius of a particle having the kinetic energy q U is: l2mU r — -

J Q5 ²

[0036] For a complete deflection of 90° for oxygen ions with maximum energies between 250 and 300 eV, a magnetic field located between racetrack and substrate having a depth of for example 10 cm, in a direction toward the substrate, would be beneficial. Further, the magnetic field would need to have a high strength, for example a strength of 0.1 T. However, for a mere reduction of a normal component of the momentum of ions, particularly oxygen ions, the requirements for the magnetic field can be much lower.

[0037] Conventionally, providing facing magnet assemblies having opposing magnetic polarities with respect to each other may be seen as disadvantageous to a person skilled in the art. The reason is that the configuration reduces the tangential magnetic field over the racetrack at least slightly. The plasma confinement may be reduced. The plasma potential may be increased, particularly by an amount of less than 10, 30, or 50 eV. A part of the present disclosure is the realization that potential negative effects associated with the configuration having opposing magnetic polarities may be less harmful than expected. In particular, the maximum ion energy always corresponds to the plasma potential of e.g. 250 to 300 eV. Accordingly, the maximum ion energy may stay extraordinarily large as compared to a desired particle energy of less than 1 eV, as particularly observed during evaporation.

[0038] FIG. 2 shows a system 200 for depositing a material, according to embodiments described herein. The first rotary target 110, the second rotary target 130, and the third rotary target 150 are positioned in a deposition chamber 202. A first additional chamber and a second additional chamber may be provided adjacent to the deposition chamber (not shown). According to some embodiments, which can be combined with other embodiments described herein, depositing a material over the substrate can be provided with a dynamic deposition process. For example, the substrate can move past the first rotary target and the second rotary target while material is deposited. The deposition chamber or regions of a vacuum processing system may be separated from further chambers or other regions by a valve.

[0039] According to some embodiments, process gases can include any of noble gases such as argon, krypton or xenon, and reactive gases such as oxygen, nitrogen, hydrogen and ammonia (NH3), Ozone (03), activated gases or the like.

[0040] The substrate 102 can be provided on a substrate carrier (not shown). An exemplary movement direction of the substrate 102 is indicated by arrow 204. The term “substrate” as used herein shall embrace both inflexible substrates, e.g., a glass substrate, a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate, and flexible substrates, such as a web or a foil. According to yet further embodiments, which can be combined with other embodiments described herein, transportation of the substrate and/or substrate carrier, respectively, can be provided by a magnetic levitation system. A carrier can be levitated or can be held without mechanical contact or with reduced mechanical contact by magnetic forces and may be moved by magnetic forces.

[0041] Each of the first rotary target 110, the second rotary target 130, and the third rotary target 150 may be a cathode. The first, second, and third rotary target may be electrically connected to a DC power supply. For example, the chamber housing or one or more shields within the vacuum chamber can be provided on mass potential. These components may serve as an anode. Optionally, a system may further include anodes. In embodiments, which can be combined with other embodiments described herein, at least one or more of the rotary targets may be electrically connected to a respective individual power supply. In particular, each of the rotary targets may be connected to a respective individual power supply. For example, the first rotary target may be connected to a first, the second rotary target may be connected to a second, and the third rotary target may be connected to a third DC power supply.

[0042] In embodiments, for example as shown in FIG. 2, a system according to the present disclosure may further include a first shield 210 positioned between the first rotary target 110 and a deposition area. A deposition area is particularly to be understood as an area where the substrate 102 is to be located during a deposition. The system 200 may further include a second shield positioned for example between the second rotary target 130 and the deposition area or between the third rotary target 150 and the deposition area.

[0043] In the depicted embodiment, the first shield 210 includes a first shield magnet assembly 212. The second shield 230 may include a second shield magnet assembly 232 facing the first shield magnet assembly 212.

[0044] Each of the first shield magnet assembly’s magnetic poles facing the second shield magnet assembly 232 may have an opposite polarity to a respectively nearest magnetic pole of the second shield magnet assembly 232. In FIG. 2, resulting magnetic field lines between the first shield magnet assembly 212 and the second shield magnet assembly 232 are indicated. The magnetic field in the aperture between the first shield 210 and the second shield 230 may be the field of a magnetic lens. Advantages regarding a deflection of charged particles, particularly as explained with regard to the rotary target’s magnet assemblies in the description of FIG. IB, may be achieved.

[0045] FIG. 3 shows a system for depositing a material, according to embodiments described herein. The substrate 102 is facing the first rotary target 110 from a first side. As compared to the system depicted in FIG. 2, the system is further configured for deposition of material on a further substrate 302 facing the first rotary target 110 from a second side opposite the first side.

[0046] The depicted system further includes a third shield 330 positioned between the first rotary target 110 and a further deposition area. The further deposition area is particularly to be understood as an area where the further substrate 302 is to be located during a deposition. The system 300 further includes a fourth shield 340 positioned between the second rotary target 130 and the further deposition area. Each of the third shield 330 and the fourth shield 340 may include at least one shield magnet assembly. The remaining structure of the system 300 may correspond to the features of the system described above with respect to FIG. 2.

[0047] According to some embodiments, which can be combined with other embodiments described herein, particularly for applications for large area deposition, an array of cathodes or cathode pairs can be provided. The array may include two or more cathodes or cathode pairs, e.g. three, four, five, six or even more cathodes or cathode pairs. The array may be provided in one deposition chamber. Outermost cathodes of the array may include only one magnet assembly, particularly instead of two magnet assemblies. The magnet assembly can be operated such that it faces one of the inner cathodes of the array, particularly without a further magnet assembly of the outermost cathode facing outwards.

[0048] The present disclosure further relates to a controller configured to be connectable to a system for depositing a material. The controller is further configured to control the system such that a method according to embodiments described herein is performed.

[0049] The controller may include a central processing unit (CPU), a memory and, for example, support circuits. To facilitate control of the system, the CPU may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various components and sub-processors. The memory is coupled to the CPU. The memory, or a computer readable medium, may be one or more readily available memory devices such as random-access memory, read only memory, a floppy disk, a hard disk, or any other form of digital storage either local or remote. The support circuits may be coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and related subsystems, and the like.

[0050] Control instructions are generally stored in the memory as a software routine or program. The software routine or program may also be stored and/or executed by a second CPU that is remotely located from the hardware being controlled by the CPU. The software routine or program, when executed by the CPU, transforms the general-purpose computer into a specific purpose computer (controller) that controls a system for depositing a material, according to any of the embodiments of the present disclosure.

[0051] Methods of the present disclosure may be implemented as a software routine or program. At least some of the method operations disclosed herein may be performed via hardware as well as by a software controller. As such, the embodiments may be implemented in software as executed upon a computer system, and hardware as an application specific integrated circuit or another type of hardware implementation, or a combination of software and hardware. The controller may execute or perform a method of depositing a material on a substrate, according to embodiments of the present disclosure. Methods described herein can be conducted using computer programs, software, computer software products and interrelated controllers, which can have a CPU, a memory, a user interface, and input and output devices being in communication with corresponding components of the system for depositing a material.

[0052] The present disclosure further relates to a method of depositing a material on a substrate. The material may include for example any of indium tin oxide and indium zinc oxide. The method includes sputtering at least a component of the material from a first rotary target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement in a first direction facing towards a second rotary target. At least three, particularly exactly three, magnetic poles of the first magnet assembly face the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction facing towards a third rotary target. At least three, particularly exactly three, magnetic poles of the second magnet assembly face the second plasma confinement.

[0053] Particularly in embodiments where non-reactive sputtering is performed, the material to be deposited on the substrate may be sputtered from any of the first, the second, and the third rotary target. This is particularly to be understood such that particles ejected from a surface of the first or second rotary target form the deposited material. Particularly in embodiments where reactive sputtering is performed, particles of a first material may be ejected from a surface of the first, the second, or the third rotary target. The particles of the first material may combine with a second material to form the material to be deposited on the substrate. The first material can be understood to be a component of the deposited material. A gas surrounding the first and the second rotary target may include the second material.

[0054] In embodiments, the first direction and the second direction deviate from being parallel to a substrate plane by an angle of less than 40°. In particular, the first and the second direction may deviate from being parallel to a substrate plane by an angle of less than 30°, 20° or 10°. In embodiments, the first direction and the second direction deviate from being parallel to a substrate plane by an angle of less than 40°, 30° or 20° towards the substrate and by an angle of less than 10° away from the substrate.

[0055] According to embodiments described herein, which can be combined with other embodiments described herein, the plasma associated with the sputtering and the substrate are moved relative to each other for deposition of material on the substrate. [0056] Generally, the magnet assemblies may be held still during deposition of the material on a substrate. In embodiments, the magnet assemblies can be moved relative to each other and/or relative to the substrate during deposition, e.g. in an oscillating or back-and-forth manner. A uniformity of a deposited layer may be increased or different deposition characteristics can be provided with increasing film thickness.

[0057] FIG. 4 is a chart illustrating a method of depositing a material on a substrate, according to embodiments described herein. The method 400 includes adapting a first magnet assembly of a first rotary target such that the first magnet assembly provides a first plasma confinement in a first direction facing a second rotary target, in block 402. At least three magnetic poles of the first magnet assembly face the first plasma confinement. The method further includes adapting a second magnet assembly of the first rotary target such that the second magnet assembly provides a second plasma confinement in a second direction facing a third rotary target, in block 404. At least three magnetic poles of the second magnet assembly face the second plasma confinement.

[0058] Especially in embodiments where the magnet assembly includes a permanent magnet, adapting the magnet assembly may be understood as providing the magnet assembly to a specific position within the rotary target, particularly with a specific orientation. The method further includes depositing a material on a substrate by sputtering at least a component of the material from the first rotary target, in block 406.

[0059] Embodiments described herein can be utilized for Display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, large area substrates or respective carriers, wherein the carriers have a plurality of substrates, may have a size of at least 0.67 m ² Typically, the size can be about 0.67m2 (0.73x0.92m - Gen 4.5) to about 8 m ² , more typically about 2 m ² to about 9 m ² or even up to 12 m ² Typically, the substrates or carriers, for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, are large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m ² substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m ² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m ² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m ² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m ² substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0060] Particularly for research and development purposes, embodiments described herein may also be used for sputter deposition on substrates having a size smaller than for example 300 mm x 300 mm or 250 mm x 250 mm. In particular, the substrate may have a size of 200 mm x 200 mm. In embodiments, a carrier having a size of for example 200 mm x 200 mm may be used. The carrier may be filled with multiple test coupons. According to yet further embodiments, the method of depositing as described herein may also be utilized for wafer processing. [0061] While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the basic scope of the disclosure. The scope is determined by the following claims.