Title:
METHOD FOR DETECTING IONIZATION-DAMAGED SENSITIVE PART OF BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2022/022513
Kind Code:
A1
Abstract:
Provided by the present invention is a method for detecting an ionization-damaged sensitive part of a bipolar transistor. The method comprises the following steps: selecting an irradiation source, and carrying out an irradiation test for a bipolar transistor to be tested; installing the irradiated bipolar transistor onto a test bench of a deep-energy-level transient spectrometer, and setting test parameters; selecting at least two different bias voltages and testing the bipolar transistor to obtain a deep-energy-level transient spectrum; according to a signal peak position in the deep-energy-level transient spectrum, determining whether a defect is an ionization defect; according to a defect signal energy level in the deep-energy-level transient spectrum, determining that the type of the defect is oxidation trapped charge or interface state; and according to a determination result of a defect signal type, determining an ionization-damaged sensitive region of the bipolar transistor. The detection method of the present invention is based on deep-energy-level transient spectrum analysis, may quickly determine and evaluate the sensitive region of bipolar transistor radiation damage, and helps to advance the research of bipolar device performance degradation equivalence problems and anti-radiation reinforcement technology under radiation environments.
Inventors:
LI XINGJI (CN)
YANG JIANQUN (CN)
LV GANG (CN)
WEI YADONG (CN)
XU XIAODONG (CN)
YING TAO (CN)
CUI XIUHAI (CN)
YANG JIANQUN (CN)
LV GANG (CN)
WEI YADONG (CN)
XU XIAODONG (CN)
YING TAO (CN)
CUI XIUHAI (CN)
Application Number:
PCT/CN2021/108688
Publication Date:
February 03, 2022
Filing Date:
July 27, 2021
Export Citation:
Assignee:
HARBIN INST TECHNOLOGY (CN)
International Classes:
G01N23/02
Foreign References:
| CN111855704A | 2020-10-30 | |||
| CN106353344A | 2017-01-25 | |||
| CN108254668A | 2018-07-06 | |||
| CN103868973A | 2014-06-18 | |||
| CN108281480A | 2018-07-13 | |||
| CN103926518A | 2014-07-16 |
Attorney, Agent or Firm:
TALENT PATENT&TRADEMARK FIRM (CN)
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