Title:
METHOD AND DEVICE FOR DETECTING TERMINATION OF ETCHING
Document Type and Number:
WIPO Patent Application WO/2013/073160
Kind Code:
A1
Abstract:
Disclosed is an etching termination detection method whereby the position of termination of etching of an SOI substrate can be accurately detected irrespective of the aperture width. In a method of etching termination detection when etching an annular aperture wherein, on an SOI substrate where a silicon layer is arranged on an insulating layer, the time point at which the aforementioned insulating layer on the aforementioned silicon layer has been reached is detected, a first electrode layer is formed on the surface of an island region surrounded by the aperture formed by the aforementioned etching, an etching termination detection region is formed by forming a second electrode layer in a region outside the insulating region, the electrical resistance between the aforementioned first electrode layer and the aforementioned second electrode layer is measured, and the time point where the etching termination position has been reached is identified when a preset threshold value of the electrical resistance thereof is exceeded.
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Inventors:
TOMIZAWA HIROSHI (JP)
FURUICHI TAKUYA (JP)
FURUICHI TAKUYA (JP)
Application Number:
PCT/JP2012/007255
Publication Date:
May 23, 2013
Filing Date:
November 12, 2012
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/3065; B81C1/00
Foreign References:
| JPH11274142A | 1999-10-08 | |||
| JPH0555548A | 1993-03-05 | |||
| JPH0465836A | 1992-03-02 | |||
| JPH0371630A | 1991-03-27 | |||
| JPS4984377A | 1974-08-13 | |||
| JP2006150563A | 2006-06-15 | |||
| JPS60167332A | 1985-08-30 | |||
| JPS62256438A | 1987-11-09 |
Attorney, Agent or Firm:
HIROSE, Hajime et al. (JP)
Hirose 1 (JP)
Hirose 1 (JP)
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Claims: