Title:
METHOD AND DEVICE FOR FORMING FILM BY SPUTTERING PROCESS
Document Type and Number:
WIPO Patent Application WO/1992/016671
Kind Code:
A1
Abstract:
A method of forming an accumulated film on a specified base body by subjecting a target for film formation arranged in a film forming chamber to sputtering process with the application of plasma generated by the use of sputtering gas, characterized in that adhesion preventive member is arranged in such a manner as surrounding a plasma zone to generate said plasma in the film forming chamber, said preventive member is heat-treated prior to film formation, a specified bias voltage is impressed on said preventive member at the time of film-formation, and, while said preventive member is being cooled, an accumulated film is formed on the base body kept at a specified temperature. Further, the invention relates to a device appropriate for application of the above-said method.
Inventors:
YOSHIKAWA TOSHIAKI (JP)
Application Number:
PCT/JP1992/000333
Publication Date:
October 01, 1992
Filing Date:
March 19, 1992
Export Citation:
Assignee:
CANON KK (JP)
International Classes:
C23C14/34; C23C14/40; C23C14/56; H01J37/34; (IPC1-7): C23C14/34
Foreign References:
| JPS6026659A | 1985-02-09 | |||
| JPS6372878A | 1988-04-02 | |||
| JPH01147061A | 1989-06-08 | |||
| JPS61266573A | 1986-11-26 | |||
| JPS4625609B1 |
Other References:
ELECTRONICS, INFORMATION AND COMMUNICATION SOCIETY SDM90-85, 31 August 1990, YOKO GOTO et al., "Precision Control of Plasma Parameters in a Next Generation Plasma Equipment", pages 57-61.
SIEGFRIED SCHILLER, ULRICHHEISICH, "Vaccum Vapor Deposition", 1 June 1977, AGNE, pages 85-86.
SIEGFRIED SCHILLER, ULRICHHEISICH, "Vaccum Vapor Deposition", 1 June 1977, AGNE, pages 85-86.
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