Title:
METHOD AND DEVICE FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2017/098537
Kind Code:
A1
Abstract:
According to one embodiment of the present invention, a method for manufacturing a tunnel magnetoresistance effect element is characterized by having: a step for preparing a substrate on which a ferromagnetic layer is formed; a step for disposing a first insulating material target parallel to a film-forming surface of the substrate; a step for disposing a second insulating material target at a predetermined cathode angle with respect to the film-forming surface of the substrate; and a step for forming a tunnel barrier layer on the surface of the substrate by performing sputtering at one time from the first and second insulating material targets.
Inventors:
SEINO TAKUYA (JP)
NISHIMURA KAZUMASA (JP)
OTANI YUICHI (JP)
NISHIMURA KAZUMASA (JP)
OTANI YUICHI (JP)
Application Number:
PCT/JP2015/006056
Publication Date:
June 15, 2017
Filing Date:
December 07, 2015
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
International Classes:
H01L43/12; C23C14/34; H01L43/08
Domestic Patent References:
| WO2010029702A1 | 2010-03-18 |
Foreign References:
| JP2008047661A | 2008-02-28 | |||
| JPH05320892A | 1993-12-07 | |||
| JPS627851A | 1987-01-14 | |||
| JP4739464B2 | 2011-08-03 |
Attorney, Agent or Firm:
OKABE, Yuzuru et al. (JP)
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