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Title:
METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR CRYSTAL, AND SEMICONDUCTOR CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2011/010724
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a semiconductor crystal that has the following steps: a step for preparing a vertical vessel (1) containing a seed crystal (8) and an impurity-containing melt (9) on a bottom part (1b), and having a material block (11) to be dripped which is formed from a semiconductor material with a lower impurity concentration than that of the impurity-containing melt (9) and which is suspended on a suspension section (2) disposed on an upper part (1a) that is above the bottom part (1b) in the vertical direction; and a step for manufacturing a semiconductor crystal (12) by solidifying the impurity-containing melt (9) from the side that is in contact with the seed crystal (8) through the process of creating a temperature gradient in the vertical direction of the vertical vessel (1) so as to melt the material block (11) and of dripping the obtained melt (13) onto the impurity-containing melt (9).

Inventors:
SAKURADA TAKASHI (JP)
KAWASE TOMOHIRO (JP)
Application Number:
PCT/JP2010/062437
Publication Date:
January 27, 2011
Filing Date:
July 23, 2010
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
SAKURADA TAKASHI (JP)
KAWASE TOMOHIRO (JP)
International Classes:
C30B11/06; C30B29/44; H01L21/208
Foreign References:
JP2005350295A2005-12-22
JPH05893A1993-01-08
JP2000169277A2000-06-20
JPH11130578A1999-05-18
JP2007051054A2007-03-01
JPH0952788A1997-02-25
JPH10218699A1998-08-18
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
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