METHOD AND DEVICE FOR PROCESSING CARBON NANOTUBES

WIPO Patent Application WO/2013/024644

A1

A wafer (W) on which carbon nanotubes have been formed is placed atop a stage (3) within a treatment container (1) of an etching device (100). Plasma-generating gas is introduced from a shower ring (57) into the treatment container (1), and microwaves generated by a microwave generation unit (35) are guided to a planar antenna (33) and introduced into the treatment container (1) via a transmission plate (39). The microwaves transform the plasma-generating gas into plasma, and oxidizing gas (for example, O2 gas) or reducing gas (for example, H2 gas or NH3 gas) is introduced into the treatment container (1) and transformed into plasma at the time when the plasma is ignited. By acting on the carbon nanotubes on the wafer (W), the low-electron-temperature plasma thus formed causes etching to proceed from the distal end side toward the proximal end side in the longitudinal direction.

JP5415929	Method of Isolating Carbon Nanotube Columnar Structure from Carbon Nanotube Composite Structure
JP3912274	CARBON NANOTUBE AGGREGATE, AND CARBON NANOTUBE SETTING DEVICE WITH THE SAME SET THEREIN
JP3095013	[Title of Invention] Method for Purifying Carbon Tube

MATSUMOTO TAKASHI (JP)
AKIYAMA OSAYUKI (JP)

PCT/JP2012/067431

February 21, 2013

July 09, 2012

Click for automatic bibliography generation  

TOKYO ELECTRON LTD (JP)
MATSUMOTO TAKASHI (JP)
AKIYAMA OSAYUKI (JP)

C01B31/02; B82Y40/00; H01J9/02

JP2011068513A	2011-04-07
JP2001262343A	2001-09-26
JP2009292716A	2009-12-17

WATANABE Kazuhiro et al. (JP)
Kazuhiro Watanabe (JP)

View/Download PDF      PDF Help

Previous Patent: COMMUNICATION SYSTEM

Next Patent: CHARGING MANAGEMENT SYSTEM, CHARGER, AND PROGRAM