METHOD OF DISCHARGING GAS FROM CONTINUOUS OVEN AND GAS DISCHARGE STRUCTURE

Title:

METHOD OF DISCHARGING GAS FROM CONTINUOUS OVEN AND GAS DISCHARGE STRUCTURE

Document Type and Number:

WIPO Patent Application WO/2007/091451

Kind Code:

A1

Abstract:

In the burning of an object containing silicon metal as a component or of SiC or Si3N4, the SiO volatilized can be safely discharged without depositing on the inner wall of the oven or the inner surface of the gas discharge duct. In the method, which is a gas discharge method for a continuous oven for continuously burning a silicon-metal-containing object or SiC or Si3N4, which is highly refractory, 1) an oven gas containing SiO volatilized during the burning is discharged from the oven. A gas discharge pipe (2) for use in this discharge is disposed so as to extend from that upper part of a side wall (12) of the oven which has a temperature (1,300°C or higher) higher than the condensation temperature of the SiO volatilized during the burning. 2) The SiO discharged is oxidized outside the oven to make it harmless. The oven gas discharged through the gas discharge pipe (2) is led to a gas discharge cylinder (3) connected to the oven outlet side of the gas discharge pipe (2). This gas discharge cylinder (3) has oxygen supply holes (31a) and (31b). Oxygen supplied from an adequate oxygen supply source is sent into the gas discharge cylinder (3), whereby the SiO led to the gas discharge cylinder (3) reacts with the oxygen to become harmless.

Inventors:

MIYATA JOTARO (JP)
GOSHIMA TAKASHI (JP)
IHARA CHIKASHI (JP)

Application Number:

PCT/JP2007/051507

Publication Date:

August 16, 2007

Filing Date:

January 30, 2007

Export Citation:

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Assignee:

NGK INSULATORS LTD (JP)
MIYATA JOTARO (JP)
GOSHIMA TAKASHI (JP)
IHARA CHIKASHI (JP)

International Classes:

F27B9/30; F27B9/04; F27D17/00

Foreign References:

JP2002249385A	2002-09-06
JPS63217188A	1988-09-09
JPH11257862A	1999-09-24

Other References: