Title:
METHOD FOR DRIVING NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/118185
Kind Code:
A1
Abstract:
Disclosed is a method for driving a non-volatile memory element (100) in which a variable resistance element (10) and a current control element (20) are connected in series, wherein: the variable resistance element (10) is provided with a first electrode (1), a second electrode (2), and a variable resistance layer (3) which can reversibly change between a high resistance state and a low resistance state in response to the applied electrical signals having different polarity; and the current control element (20) has rectification characteristics in both directions in relation to an applied voltage. After the non-volatile memory element (100) is produced, the non-volatile memory element (100) is applied with a voltage pulse having the same polarity as the polarity of the voltage pulse used for changing the variable resistance layer (3) from a low resistance state to a high resistance state during normal operation. As a consequence, the resistance value of the variable resistance layer (3) is reduced from the initial resistance in which the resistance value is higher than the resistance value during the high resistance state.
Inventors:
KATAYAMA, Koji (())
片山 幸治 (())
TAKAGI, Takeshi (())
片山 幸治 (())
TAKAGI, Takeshi (())
Application Number:
JP2011/001629
Publication Date:
September 29, 2011
Filing Date:
March 18, 2011
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
KATAYAMA, Koji (())
片山 幸治 (())
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
KATAYAMA, Koji (())
片山 幸治 (())
International Classes:
H01L27/105; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
NII, Hiromori (6F Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-cit, Osaka 11, 〒5320011, JP)
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Claims: