Title:
METHOD FOR DRIVING NON-VOLATILE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/183242
Kind Code:
A1
Abstract:
During a period of time shorter than the period of time required for flipping all polarizations included in a ferroelectric film (13), pulse voltages V1 and V2 are applied to a first upper gate electrode (17a) and a second upper gate electrode (17b), respectively, while voltages Vs, Vd, and V3 are applied to a source electrode (15), a drain electrode (16), and a lower gate electrode membrane (12), respectively, so that a width WRL1 and a width WRL2 increase, and a width WRH decreases. Absolute values of the pulse voltages V1 and V2 are less than the absolute value of voltage required for flipping all polarizations included in the ferroelectric film (13). The voltages Vs, Vd, and V3 and the pulse voltages V1 and V2 satisfy the relationship of Vs, Vd, V3 > V1, V2.
Inventors:
KANEKO YUKIHIRO
Application Number:
PCT/JP2013/003254
Publication Date:
December 12, 2013
Filing Date:
May 22, 2013
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H03K19/21; H01L21/8246; H01L27/105; H01L45/00; H01L49/00
Foreign References:
| JP2009033188A | 2009-02-12 | |||
| US6473332B1 | 2002-10-29 |
Attorney, Agent or Firm:
OKUDA, SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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