Title:
METHOD OF DRIVING A NONVOLATILE MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/148092
Kind Code:
A2
Abstract:
In relation to a nonvolatile memory device having a SONOS structure according to the present invention, at least one n-well is formed on a semiconductor substrate doped with a p type dopant, and a plurality of memory cells sharing a source region are formed on the n-well. A memory array including such memory cells applies a predetermined voltage to unselected word lines and bit lines in addition to a corresponding memory cell while each memory cell is programmed, erased, and read. Thus, without introducing a related art selection gate layer, effects on adjacent memory cells are prevented, thereby preventing a reading error and program disturb. According to the present invention, a nonvolatile memory device having a SONOS structure is miniaturized, program and erase operations are possible using low power, excellent cycling characteristics are obtained, and a program erase operation is possible by means of a memory cell unit sharing the same n-well. Therefore, an erase area of a small unit may be realized.
Inventors:
SONG BOK-NAM (KR)
KIM SEONG GYUN (KR)
KIM SEONG GYUN (KR)
Application Number:
PCT/KR2012/002470
Publication Date:
November 01, 2012
Filing Date:
April 02, 2012
Export Citation:
Assignee:
SONG BOK-NAM (KR)
KIM SEONG GYUN (KR)
KIM SEONG GYUN (KR)
International Classes:
G11C16/10; G11C16/14; H01L27/115
Foreign References:
| KR20060089262A | 2006-08-09 | |||
| KR100475119B1 | 2005-03-10 | |||
| KR20060012103A | 2006-02-07 | |||
| KR20090093938A | 2009-09-02 |
Attorney, Agent or Firm:
B&IP-JOOWON PATENT AND LAW FIRM (KR)
특허법인주원 (KR)
특허법인주원 (KR)
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Claims: