METHOD OF DRY ETCHING, DRY ETCHING GAS AND PROCESS FOR PRODUCING PERFLUORO-2-PENTYNE

Title:

METHOD OF DRY ETCHING, DRY ETCHING GAS AND PROCESS FOR PRODUCING PERFLUORO-2-PENTYNE

Document Type and Number:

WIPO Patent Application WO/2004/008515

Kind Code:

A1

Abstract:

A method of dry etching, comprising exposing a resist film to radiation of 195 nm or less wavelength so as to form a resist pattern of 200 nm or less minimum line width and subjecting the resist pattern to dry etching using a fluorinated compound of C₄-C₆ having at least one unsaturated bond as an etching gas. Perfluoro-2-pentyne, perfluoro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used as the fluorinated compound. Perfluoro-2-pentyne can be synthesized by reacting a 1,1,1-trihalo-2,2,2-trifluoroethane with pentafluoropropylene aldehyde into a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene and eliminating a hydrogen halide from this 2-pentene.

Inventors:

YAMADA TOSHIRO (JP)
SUGIMOTO TATSUYA (JP)

Application Number:

PCT/JP2003/009023

Publication Date:

January 22, 2004

Filing Date:

July 16, 2003

Export Citation:

Click for automatic bibliography generation Help

Assignee:

ZEON CORP (JP)
YAMADA TOSHIRO (JP)
SUGIMOTO TATSUYA (JP)

International Classes:

C03C25/68; C07C17/26; C07C17/25; C07C21/18; C07C21/22; H01L21/3065; H01L21/311; H01L21/3213; (IPC1-7): H01L21/3065

Domestic Patent References:

WO2000030168A1

2000-05-25

Foreign References:

JP2000206704A	2000-07-28
JP2001110790A	2001-04-20
JP2003282540A	2003-10-03
EP0755909A1	1997-01-29

Other References: