Title:
METHOD FOR DRY-ETCHING INTERLAYER INSULATING FILM
Document Type and Number:
WIPO Patent Application WO/2007/135906
Kind Code:
A1
Abstract:
In a method for dry-etching an interlayer insulating film, the interlayer insulating
film is microfabricated while forming a polymer film on an ArF resist or a KrF resist
arranged on the interlayer insulating film by an etching gas. The etching gas
is introduced at a pressure of 0.5Pa or less, and etching is performed while forming
the polymer film having a C-F bonding peak near 1,200cm-1, a C-N bonding
peak near 1,600cm-1 and a C-H bonding peak (spectrum measured by a Fourier
transform infrared spectrophotometer) near 3,300cm-1.
Inventors:
MORIKAWA YASUHIRO (JP)
SUU KOUKOU (JP)
SUU KOUKOU (JP)
Application Number:
PCT/JP2007/060010
Publication Date:
November 29, 2007
Filing Date:
May 16, 2007
Export Citation:
Assignee:
ULVAC INC (JP)
MORIKAWA YASUHIRO (JP)
SUU KOUKOU (JP)
MORIKAWA YASUHIRO (JP)
SUU KOUKOU (JP)
International Classes:
H01L21/3065; H01L21/768; H01L23/522
Foreign References:
| JP2005251814A | 2005-09-15 | |||
| JP2006100628A | 2006-04-13 | |||
| JP2004071731A | 2004-03-04 |
Attorney, Agent or Firm:
Exeo Patent & Trademark Company (Daishin Bldg.2-6-2 Ebisunish, Shibuya-ku Tokyo 21, JP)
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