Title:
METHOD FOR DRY ETCHING OF MASKING LAYERS WITHOUT OXIDATION OF A MEMORY CELL AND SOURCE LINE
Document Type and Number:
WIPO Patent Application WO/2015/177972
Kind Code:
A1
Abstract:
Various embodiments of the present invention are directed to a method for passivating a metal line (300, 301, 302, 310), e.g. a memory cell and a source line of a CBRAM, prior to removing a masking layer (106) in order to prevent oxidation of the metal line. The method includes exposing and reacting the metal line (e.g. copper) with a fluorine based etchant so as to form a protective film (400) composed of CuFx.
Inventors:
AKHTAR KAMRAN (US)
DUTTA ASHIM (US)
SCHRINSKY ALEX J (US)
TRAPP SHANE J (US)
DUTTA ASHIM (US)
SCHRINSKY ALEX J (US)
TRAPP SHANE J (US)
Application Number:
PCT/JP2015/002282
Publication Date:
November 26, 2015
Filing Date:
April 28, 2015
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/768; C23C8/04; C23C8/08; H01L45/00
Foreign References:
| US20100093168A1 | 2010-04-15 | |||
| US6440852B1 | 2002-08-27 | |||
| US20100029086A1 | 2010-02-04 | |||
| US20020050647A1 | 2002-05-02 | |||
| US20050079703A1 | 2005-04-14 |
Other References:
None
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (Shinjuku 1-chome Shinjuku-k, Tokyo 22, JP)
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