METHOD FOR ELIMINATING WAFER WARPAGE AND COMPOSITE SUBSTRATE - CHONGQING WATTSCIENCE ELECTRONIC TECH CO LTD

Title:

METHOD FOR ELIMINATING WAFER WARPAGE AND COMPOSITE SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2019/128524

Kind Code:

A1

Abstract:

The present invention discloses a method for eliminating wafer warpage and a composite substrate. The method comprises: S1: selecting a warped wafer (1); S2: depositing a stress compensation film with internal stress on the back surface of the wafer (1) (2), so that the internal stress of the stress compensation film (2) and the internal stress of the wafer (1) offset each other to obtain a flat composite substrate. The wafer (1) is a silicon carbide-based silicon carbide wafer or a silicon-based gallium nitride wafer. The composite substrate comprises the wafer (1) and the stress compensation film (2), the stress compensation film (2) covers the back of the wafer (1), and the internal stress of the stress compensation film (2) and the internal stress of the wafer (1) offset each other. The wafer (1) is a silicon carbide-based silicon carbide wafer or a silicon-based gallium nitride wafer. The invention deposits a stress compensation film with internal stress on the back surface of the warped wafer, so that the internal stress of the stress compensation film and the internal stress of the wafer offset each other, thereby eliminating warpage.

More Like This:

JP5905213	A sensor terminal, a sensor network system, a sensor terminal control method
JPS62260358	SOI SUBSTRATE AND MANUFACTURE THEREOF
JP2014532310	Method for processing units containing crystalline materials and method for forming semiconductor on-insulator structures

Inventors:

HE JUN (CN)

Application Number:

PCT/CN2018/115872

Publication Date:

July 04, 2019

Filing Date:

November 16, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

CHONGQING WATTSCIENCE ELECTRONIC TECH CO LTD (CN)
BEIJING PINJIE ELECTRONIC TECH CO LTD (CN)

International Classes:

H01L21/02; H01L29/16

Foreign References:

CN108183065A	2018-06-19
US20170162522A1	2017-06-08
US20170148747A1	2017-05-25
CN205452236U	2016-08-10
CN105405945A	2016-03-16

Attorney, Agent or Firm:

BEIJING ZHILIN HENGYUAN IP FIRM (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: CT INSPECTION SYSTEM AND CT IMAGING METHOD

Next Patent: METHOD AND DEVICE FOR DETERMINING DATA ANOMALY