Title:
METHOD FOR ENHANCING STABILITY OF N-TYPE SEMICONDUCTOR BY MEANS OF OXYGEN ELIMINATION
Document Type and Number:
WIPO Patent Application WO/2023/231395
Kind Code:
A1
Abstract:
A method for enhancing the stability of an N-type semiconductor by means of oxygen elimination, which method comprises: constructing an antioxidant layer on a surface of a semiconductor material, or blending an antioxidant with an N-type semiconductor material. The antioxidant removes existing oxygen and related species from an N-type semiconductor, eliminates a related trap state, and prevents further degradation of the N-type semiconductor, such that the electrical properties such as the mobility of the N-type semiconductor device are improved, and both the operational stability and the long-term storage stability thereof are enhanced. In addition, the antioxidant can also inhibit photobleaching of the N-type semiconductor and significantly improve the photochemical stability of the N-type semiconductor. Comparing the present application with performance tests performed on an N-type semiconductor device that is not covered and does not have an antioxidant mixed therein, it is found that the electrical properties such as the mobility of the prepared N-type semiconductor device are improved, and both the operational stability and the long-term storage stability thereof are enhanced.
Inventors:
LI LIQIANG (CN)
YUAN LIQIAN (CN)
HUANG YINAN (CN)
HE JINBO (CN)
HU WENPING (CN)
YUAN LIQIAN (CN)
HUANG YINAN (CN)
HE JINBO (CN)
HU WENPING (CN)
Application Number:
PCT/CN2022/141769
Publication Date:
December 07, 2023
Filing Date:
December 26, 2022
Export Citation:
Assignee:
UNIV TIANJIN (CN)
International Classes:
H01L29/80
Foreign References:
| US20140190566A1 | 2014-07-10 | |||
| US20080308807A1 | 2008-12-18 | |||
| JP2005005582A | 2005-01-06 | |||
| CN114937742A | 2022-08-23 | |||
| CN102443137A | 2012-05-09 | |||
| JP2004088094A | 2004-03-18 |
Attorney, Agent or Firm:
BEIJING SHENGXUN IP AGENCY CO., LTD. (CN)
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