Title:
METHOD FOR ETCHING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2013/058070
Kind Code:
A1
Abstract:
This etching method is a method for etching a semiconductor substrate (15) using an alkaline water solution which contains a surfactant (17), and is implemented by generating an electric field during etching treatment so that the electric field should become perpendicular to an etching surface of the semiconductor substrate (15). Thus, precise concave-convex structures can be regularly formed on the semiconductor substrate.
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Inventors:
OKAYAMA MORIYA
KOYAMA YASUHIRO
ODA HAJIME
KOYAMA YASUHIRO
ODA HAJIME
Application Number:
PCT/JP2012/074591
Publication Date:
April 25, 2013
Filing Date:
September 25, 2012
Export Citation:
Assignee:
SHARP KK (JP)
OKAYAMA MORIYA
KOYAMA YASUHIRO
ODA HAJIME
OKAYAMA MORIYA
KOYAMA YASUHIRO
ODA HAJIME
International Classes:
H01L21/306; H01L31/04
Domestic Patent References:
| WO2006046601A1 | 2006-05-04 |
Foreign References:
| JP2000332270A | 2000-11-30 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
Patent business corporation Hara [Kenzo] international patent firm (JP)
Patent business corporation Hara [Kenzo] international patent firm (JP)
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