Title:
METHOD FOR ETCHING A SILICON WAFER, ETCHING SOLUTION, ETCHING DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/114675
Kind Code:
A1
Abstract:
In order to improve the light absorption of cells in solar power generation devices, an etching method needs to be found that can inexpensively and reliably produce higher-density patterns, can efficiently reduce light reflectance, and uses an alkaline solution. The disclosed method, which uses wet etching to form a pattern on the surface of a silicon wafer used in a cell in a solar power generation device, uses an etching solution containing water, an alkali, and 1,6-hexanediol.
Inventors:
YASUNAGA NOZOMU (JP)
Application Number:
PCT/JP2011/001431
Publication Date:
September 22, 2011
Filing Date:
March 11, 2011
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
YASUNAGA NOZOMU (JP)
YASUNAGA NOZOMU (JP)
International Classes:
H01L31/04; H01L21/306; H01L21/308
Foreign References:
| JP2006093453A | 2006-04-06 | |||
| JP2000001792A | 2000-01-07 | |||
| JP2005537680A | 2005-12-08 | |||
| JP2005079382A | 2005-03-24 | |||
| JP2009088227A | 2009-04-23 | |||
| JP2010074102A | 2010-04-02 |
Attorney, Agent or Firm:
TAKAHASHI, Shogo et al. (JP)
Shogo Takahashi (JP)
Shogo Takahashi (JP)
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Claims: