Title:
METHOD FOR EVALUATING WAFER DEFECTS
Document Type and Number:
WIPO Patent Application WO/2013/009026
Kind Code:
A2
Abstract:
According to one embodiment of the present invention, a method for evaluating wafer defects comprises the steps of: preparing a wafer sample; forming an oxide film on the wafer sample; measuring a minority carrier diffusion length using a surface photovoltage; and determining a degree of contamination.
Inventors:
HAM HO-CHAN (KR)
Application Number:
PCT/KR2012/005287
Publication Date:
January 17, 2013
Filing Date:
July 03, 2012
Export Citation:
Assignee:
LG SILTRON INC (KR)
HAM HO-CHAN (KR)
HAM HO-CHAN (KR)
International Classes:
H01L21/66
Foreign References:
| JPH11297779A | 1999-10-29 | |||
| KR20020051346A | 2002-06-29 | |||
| JPH0883828A | 1996-03-26 |
Attorney, Agent or Firm:
SEO, Kyo-Jun (KR)
서교준 (KR)
서교준 (KR)
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