Title:
METHOD OF FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/042438
Kind Code:
A1
Abstract:
Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.
Inventors:
YOU JONG KYUN (KR)
KIM CHANG YEON (KR)
KIM DA HYE (KR)
IM TAE HYUK (KR)
KIM TAE GYUN (KR)
KIM YOUNG WUG (KR)
KIM CHANG YEON (KR)
KIM DA HYE (KR)
IM TAE HYUK (KR)
KIM TAE GYUN (KR)
KIM YOUNG WUG (KR)
Application Number:
PCT/KR2013/008234
Publication Date:
March 20, 2014
Filing Date:
September 11, 2013
Export Citation:
Assignee:
SEOUL VIOSYS CO LTD (KR)
International Classes:
H01L33/02; H01L33/12; H01L33/32
Domestic Patent References:
| WO2008062783A1 | 2008-05-29 |
Foreign References:
| JP2010245338A | 2010-10-28 | |||
| KR101161917B1 | 2012-07-18 | |||
| JP2011077351A | 2011-04-14 | |||
| JP2007221051A | 2007-08-30 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (813-14,Yeoksam-dong, Gangnam-gu, Seoul 135-933, KR)
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