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Title:
METHOD FOR FABRICATING HIGH PRECISION MEMS INERTIAL SENSOR USING SOI WAFER AND ACCELEROMETER
Document Type and Number:
WIPO Patent Application WO/2019/109639
Kind Code:
A1
Abstract:
A method for fabricating a high precision MEMS inertial sensor using an SOI wafer and an accelerometer, wherein the method for fabricating a high precision MEMS inertial sensor comprises the following steps: 1. Processing an SOI wafer: fabricating a driving capacitive plate (3) and a packaging bump (1) on a device layer (7) of the SOI wafer, and adopting a deep silicon etching process to etch an etching groove (6) directly into a sacrificial layer (8) of the SOI wafer so as to complete integrated processing of a silicon-based detection mass block (2) and a spring (4); fabricating a mask on a support layer (9), and adopting a deep silicon etching process to fabricate a release hole structure directly in the sacrificial layer (8) of the SOI wafer; etching the sacrificial layer (8) of the SOI wafer to release a movable component; 2. Fabricating cover plates (1001, 1004); 3. Alignment packaging to form a MEMS inertial sensor. The invention can effectively produce a large detection mass block with higher accuracy in capacitive displacement detection to resolve the issue of low precision of a MEMS inertial sensor. The micro-electromechanical accelerometer produced can resolve issues of high manufacturing costs and long manufacturing periods of traditional accelerometers.

Inventors:
LIU HUAFENG (CN)
TU LIANGCHENG (CN)
SONG XIAOXIAO (CN)
WU WENJIE (CN)
LIU JINQUAN (CN)
RAO KANG (CN)
QU ZIQIANG (CN)
XU XIAOCHAO (CN)
Application Number:
CN2018/095022
Publication Date:
June 13, 2019
Filing Date:
July 09, 2018
Export Citation:
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Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
G01C21/16; G01V7/00
Foreign References:
CN108151735A2018-06-12
CN108152862A2018-06-12
CN102645556A2012-08-22
CN101844739A2010-09-29
US20120248506A12012-10-04
CN204439662U2015-07-01
CN201828268U2011-05-11
Attorney, Agent or Firm:
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY PATENT AGENCY CENTER (CN)
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