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Title:
METHOD FOR FABRICATING METAMORPHIC COMPOUND SEMICONDUCTOR SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2011/118902
Kind Code:
A1
Abstract:
A method of fabricating a metamorphic compound semiconductor solar cell is provided. The method includes forming a graded buffer layer on a support substrate, the graded buffer layer having a graded lattice constant from a bottom surface thereof toward a top surface thereof. A sacrificial layer is formed on the graded buffer layer. A solar cell structure is formed on the sacrificial layer. A support structure is formed on the solar cell structure. The sacrificial layer is selectively etched to separate the solar cell structure from the graded buffer layer. The separated solar cell structure is bonded to a host substrate.

Inventors:
JEONG YON KIL (KR)
MOON SEUNG-HYEON (KR)
PARK DONG-WON (KR)
SHIM HEE-SANG (KR)
OH SEUNG-HWAN (KR)
LEE JAE-KWANG (KR)
Application Number:
PCT/KR2010/009041
Publication Date:
September 29, 2011
Filing Date:
December 17, 2010
Export Citation:
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Assignee:
KWANGJU INST SCI & TECH (KR)
JEONG YON KIL (KR)
MOON SEUNG-HYEON (KR)
PARK DONG-WON (KR)
SHIM HEE-SANG (KR)
OH SEUNG-HWAN (KR)
LEE JAE-KWANG (KR)
International Classes:
H01L31/042
Domestic Patent References:
WO2009005825A12009-01-08
Foreign References:
KR100916199B12009-09-08
Attorney, Agent or Firm:
E-SANG PATENT & TRADEMARK LAW FIRM (82-2Yangjae-dong, Seocho-gu, Seoul 137-890, KR)
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Claims: