Title:
METHOD FOR FABRICATING NANOWIRES
Document Type and Number:
WIPO Patent Application WO/2011/078651
Kind Code:
A3
Abstract:
The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of metal catalyst or mixed powder. This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process.
Inventors:
BIEN CHIA SHENG DANIEL (MY)
RAHIMAH MOHD SAMAN (MY)
SITI AISHAH MOHAMAD BADARUDDIN (MY)
RAHIMAH MOHD SAMAN (MY)
SITI AISHAH MOHAMAD BADARUDDIN (MY)
Application Number:
PCT/MY2010/000318
Publication Date:
November 24, 2011
Filing Date:
December 13, 2010
Export Citation:
Assignee:
MIMOS BERHAD (MY)
BIEN CHIA SHENG DANIEL (MY)
RAHIMAH MOHD SAMAN (MY)
SITI AISHAH MOHAMAD BADARUDDIN (MY)
BIEN CHIA SHENG DANIEL (MY)
RAHIMAH MOHD SAMAN (MY)
SITI AISHAH MOHAMAD BADARUDDIN (MY)
International Classes:
B82B3/00; B82B1/00
Foreign References:
| US20060027020A1 | 2006-02-09 |
Attorney, Agent or Firm:
TAN, Boon Leng (32A Jln 17/155C Bukit Jalil, Kuala Lumpur, MY)
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