METHOD FOR FABRICATING PIEZOELECTRIC ELEMENT - JAPAN SCIENCE & TECH AGENCY

Title:

METHOD FOR FABRICATING PIEZOELECTRIC ELEMENT

Document Type and Number:

WIPO Patent Application WO/2005/074052

Kind Code:

A1

Abstract:

A mask material (12) applied to the surface to be processed of a piezoelectric material (11) is brought into contact with solvent vapor (V) and reflowed, and then shaped into a bump mask (14) where the central part is raised by the surface tension of the mask material. When it is dry etched subsequently, the surface of the piezoelectric material (11) is processed to have a three-dimensional shape (15) copying the film thickness distribution of the bump mask (14). When the piezoelectric material is subjected to oil repellent treatment with a surface treatment agent (13) or the like, the reflow area of the mask material is limited, and distribution and shape of the bump mask (14) can be controlled. Since the patterned mask material is dry etched after shaped into a convex shape, a piezoelectric element having a large mass at the central part can be fabricated.

Inventors:

ABE TAKASHI (JP)
LI LI (JP)

Application Number:

PCT/JP2005/001564

Publication Date:

August 11, 2005

Filing Date:

January 27, 2005

Export Citation:

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Assignee:

JAPAN SCIENCE & TECH AGENCY (JP)
ABE TAKASHI (JP)
LI LI (JP)

International Classes:

H01L41/08; H01L41/09; H01L41/18; H01L21/3065; H01L41/22; H01L41/332; H03H3/02; H03H9/19; (IPC1-7): H01L41/22; H01L41/09; H03H3/02

Foreign References:

JP2003234632A	2003-08-22
JP2003168941A	2003-06-13
JP2002368572A	2002-12-20
JP2003234632A	2003-08-22
JP2004349365A	2004-12-09
EP1156584A1	2001-11-21
US20030020188A1	2003-01-30

Other References: