METHOD OF FABRICATING REFLECTION-MODE EUV DIFFRACTION ELEMENTS

WIPO Patent Application WO2002071105

A3

Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.

NAULLEAU PATRICK P (US)

PCT/US2001/043058

March 13, 2003

November 13, 2001

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UNIV CALIFORNIA (US)
NAULLEAU PATRICK P (US)

G02B1/10; G02B5/18; G03F1/24; G03F7/20; G21K1/06; (IPC1-7): G02B5/18; G03F7/00; G02B1/10

EP1011028A2	2000-06-21
US5958605A	1999-09-28
US5591678A	1997-01-07

PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13)
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30)
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05 31 May 1996 (1996-05-31)

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