Title:
METHOD FOR FABRICATING SIC MOSFET ON THE BASIS OF SELF-ALIGNING TECHNOLOGY
Document Type and Number:
WIPO Patent Application WO/2017/186033
Kind Code:
A1
Abstract:
A method for fabricating a SiC MOSFET on the basis of a self-aligning technology, which comprises the following steps: firstly, selecting an n-type SiC epitaxial material; fabricating an alignment mark on a surface of the epitaxial material according to different pieces of photoetching equipment; fabricating a p-well layer injection mask graph layer on the epitaxial material; carrying out an injection of Al ions, and forming a rectangular doped distributed p well region in SiC; carrying out an injection of P ions or an injection of N ions, so as to form an n++ type source region; removing a mask, and carrying out RCA cleaning; fabricating the mask again, and exposing an Al injection region in the n++ type source region; carrying out the Al ion injection again; carrying out the fabrication and injection of a mask of a junction terminal; carrying out RCA cleaning, and then removing an SiC layer on the surface by using HF or BOE; carrying out the growing of a gate medium; fabricating a highly-doped polycrystalline silicon layer; depositing a passivation layer; depositing an electrode metal, and etching off the metal at non-electrode positions. The method can form a very short trench, and the trenches on two sides of the interior of a cell are symmetrical; the lengths of the trenches in the whole device are uniform. The process is simple and controllable.
Inventors:
NI WEIJIANG (CN)
YUAN JUN (CN)
ZHANG JINGWEI (CN)
NIU XIPING (CN)
CUI ZHIYONG (CN)
LI MINGSHAN (CN)
XU MIAOLING (CN)
JI SHA (CN)
LU XIAODONG (CN)
SUN ANXIN (CN)
HU YUZHONG (CN)
YUAN JUN (CN)
ZHANG JINGWEI (CN)
NIU XIPING (CN)
CUI ZHIYONG (CN)
LI MINGSHAN (CN)
XU MIAOLING (CN)
JI SHA (CN)
LU XIAODONG (CN)
SUN ANXIN (CN)
HU YUZHONG (CN)
Application Number:
PCT/CN2017/081011
Publication Date:
November 02, 2017
Filing Date:
April 19, 2017
Export Citation:
Assignee:
BEIJING CENTURY GOLDRAY SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/78; H01L21/04
Foreign References:
| CN105895511A | 2016-08-24 | |||
| JP2004039744A | 2004-02-05 | |||
| CN105280546A | 2016-01-27 |
Attorney, Agent or Firm:
YIN INT'L IP FIRM (CN)
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