Title:
METHOD FOR FABRICATING TRANSPARENT CONDUCTIVE TIN OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2008/041551
Kind Code:
A1
Abstract:
A method for fabricating transparent conductive tin oxide film, which can be
grown at a low temperature and shows an extremely high conductivity, comprises
a step (1) of forming a thin film by coating and drying a precursor solution including
fluorine and tin on a substrate, a step (2) of a first light irradiation for irradiating
the thin film obtained in the step (1) with ultraviolet rays, a step (3) of heat-treating
the thin film obtained in the step (2), and a step (4) of a second light irradiation
for irradiating the thin film obtained in the step (3) with ultraviolet rays.
Inventors:
TSUCHIYA, Tetsuo (Higashi1-chom, Tsukuba-shi Ibaraki 65, 3058565, JP)
土屋 哲男 (〒65 茨城県つくば市東１－１－１ 中央第５ 独立行政法人産業技術総合研究所内 Ibaraki, 3058565, JP)
NAKAJIMA, Tomohiko (Higashi1-chom, Tsukuba-shi Ibaraki 65, 3058565, JP)
土屋 哲男 (〒65 茨城県つくば市東１－１－１ 中央第５ 独立行政法人産業技術総合研究所内 Ibaraki, 3058565, JP)
NAKAJIMA, Tomohiko (Higashi1-chom, Tsukuba-shi Ibaraki 65, 3058565, JP)
Application Number:
JP2007/068553
Publication Date:
April 10, 2008
Filing Date:
September 25, 2007
Export Citation:
Assignee:
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1 Kasumigaseki 1-chome, Chiyoda-ku Tokyo, 21, 1008921, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関１丁目３番１号 Tokyo, 1008921, JP)
TSUCHIYA, Tetsuo (Higashi1-chom, Tsukuba-shi Ibaraki 65, 3058565, JP)
土屋 哲男 (〒65 茨城県つくば市東１－１－１ 中央第５ 独立行政法人産業技術総合研究所内 Ibaraki, 3058565, JP)
独立行政法人産業技術総合研究所 (〒21 東京都千代田区霞が関１丁目３番１号 Tokyo, 1008921, JP)
TSUCHIYA, Tetsuo (Higashi1-chom, Tsukuba-shi Ibaraki 65, 3058565, JP)
土屋 哲男 (〒65 茨城県つくば市東１－１－１ 中央第５ 独立行政法人産業技術総合研究所内 Ibaraki, 3058565, JP)
International Classes:
H01B13/00; C01G19/02; H01B13/00; C01G19/00