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Title:
METHOD FOR FILLING THROUGH HOLE OF SUBSTRATE WITH METAL AND SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/011230
Kind Code:
A1
Abstract:
The present invention relates to a method for filling a through hole (5) of a substrate (2) with a metal. The method includes a step of preparing a bonded substrate including a first substrate (1) having conductivity in at least a surface thereof and a second substrate (2) having a through hole (5), both substrates being bonded to each other through a nonionic surfactant (4); a step of exposing, in the bonded surface of the bonded substrate, the conductive surface of the first substrate, which is positioned at the bottom of the through hole, by removing the nonionic surfactant positioned at the bottom of the through hole of the second substrate; and a step of filling the through hole with a metal by applying an electric field to the conductive surface of the first substrate.

Inventors:
TESHIMA, Takayuki (C/O CANON KABUSHIKI KAISHA, 30-2 Shimomaruko 3-chome, Ohta-k, Tokyo 01, 14685, JP)
SETOMOTO, Yutaka (C/O CANON KABUSHIKI KAISHA, 30-2 Shimomaruko 3-chome, Ohta-k, Tokyo 01, 14685, JP)
Application Number:
JP2011/003811
Publication Date:
January 26, 2012
Filing Date:
July 04, 2011
Export Citation:
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Assignee:
CANON KABUSHIKI KAISHA (30-2, Shimomaruko 3-chome Ohta-k, Tokyo 01, 14685, JP)
TESHIMA, Takayuki (C/O CANON KABUSHIKI KAISHA, 30-2 Shimomaruko 3-chome, Ohta-k, Tokyo 01, 14685, JP)
SETOMOTO, Yutaka (C/O CANON KABUSHIKI KAISHA, 30-2 Shimomaruko 3-chome, Ohta-k, Tokyo 01, 14685, JP)
International Classes:
H05K3/42; H01L21/48; H05K1/03
Attorney, Agent or Firm:
ABE, Takuma et al. (C/O CANON KABUSHIKI KAISHA, 30-2 Shimomaruko 3-chome, Ohta-k, Tokyo 01, 14685, JP)
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Claims: