METHOD FOR FORMATION OF RESIST PATTERN, AND DEVELOPING SOLUTION

WIPO Patent Application WO/2010/134639

A1

Disclosed is a method for forming a resist pattern, which comprise: a resist film formation step of forming a resist film containing a specific calixarene derivative on a substrate; a latent image formation step of exposing the resist film to a high-energy ray selectively to form a latent image of a pattern; and a developing step of removing a part of the resist film which has not been exposed to the high-energy ray with a developing solution containing at least one fluorinated solvent selected from the group consisting of a fluorinated alkyl ether and a fluorinated alcohol to develop the latent image. Also disclosed is use of the fluorinated solvent as a developing solution for resists.

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TONO SEIJI (JP)
CHIKASHIGE YUKI (JP)

PCT/JP2010/058939

November 25, 2010

May 20, 2010

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TOKUYAMA CORP (JP)
TONO SEIJI (JP)
CHIKASHIGE YUKI (JP)

G03F7/32; G03F7/004; G03F7/038; G03F7/38; H01L21/027

WO2004022513A1

2004-03-18

JP2002031887A	2002-01-31
JP2003315985A	2003-11-06
JP2003192649A	2003-07-09
JPH0415232A	1992-01-20
JP2003057820A	2003-02-28
JP2003195518A	2003-07-09
JPH02221962A	1990-09-04

OHSHIMA Masataka (JP)
Masataka Oshima (JP)

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