Title:
METHOD FOR FORMING ALUMINUM OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2018/139528
Kind Code:
A1
Abstract:
The method for forming an aluminum oxide film according to the present invention includes performing a sequence of processing once for each substrate using a single vacuum chamber provided with a target having aluminum oxide as a main component thereof. The sequence of processing comprises loading (step S11) of a substrate into a vacuum chamber, supplying of a sputtering gas to the vacuum chamber, formation (step S13) of an aluminum oxide film on the substrate, comprising generating a plasma using the sputtering gas and sputtering of the target using the plasma, stoppage of plasma generation, and unloading (step S14) of the substrate from the vacuum chamber. Processing subsequent to a previous formation until before the current formation is designated as processing between film formations, and at least one instance of a plurality of successive instances of processing between film formations includes supplying and stopping a supply of oxygen gas to the vacuum chamber (step S12).
Inventors:
HENMI MITSUNORI (JP)
NAKAMURA SHINYA (JP)
IKEDA YOSHIHIRO (JP)
HASHIMOTO KAZUYOSHI (JP)
NAKAMURA SHINYA (JP)
IKEDA YOSHIHIRO (JP)
HASHIMOTO KAZUYOSHI (JP)
Application Number:
PCT/JP2018/002251
Publication Date:
August 02, 2018
Filing Date:
January 25, 2018
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
C23C14/34; C23C14/08; H01L21/316
Foreign References:
| JP2003086884A | 2003-03-20 | |||
| JP2007189201A | 2007-07-26 | |||
| JPH0995773A | 1997-04-08 |
Attorney, Agent or Firm:
ONDA, Makoto et al. (JP)
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