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Patent Searching and Data


Title:
METHOD OF FORMING AN ARRAY OF HIGH ASPECT RATIO SEMICONDUCTOR NANOSTRUCTURES
Document Type and Number:
WIPO Patent Application WO/2011/049804
Kind Code:
A3
Abstract:
A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film- stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5: 1.

Inventors:
LI XIULING (US)
FANG NICHOLAS X (US)
FERREIRA PLACID M (US)
CHERN WINSTON (US)
CHUN IK SU (US)
HSU KENG HAO (US)
Application Number:
PCT/US2010/052581
Publication Date:
August 25, 2011
Filing Date:
October 14, 2010
Export Citation:
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Assignee:
UNIV ILLINOIS (US)
LI XIULING (US)
FANG NICHOLAS X (US)
FERREIRA PLACID M (US)
CHERN WINSTON (US)
CHUN IK SU (US)
HSU KENG HAO (US)
International Classes:
B32B1/00
Domestic Patent References:
WO2006078281A22006-07-27
Foreign References:
US20050191419A12005-09-01
US20060009003A12006-01-12
KR20070093461A2007-09-18
US6790785B12004-09-14
Attorney, Agent or Firm:
RITTNER, Mindy, N. (P.O. Box 10087Chicago, IL, US)
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