Title:
METHOD FOR FORMING CARBON FILM
Document Type and Number:
WIPO Patent Application WO/2017/085898
Kind Code:
A1
Abstract:
[Problem] To provide a method for forming a carbon film whereby it is possible to form, with good reproducibility, a carbon film having a resistivity of several tens of mΩ∙cm, which is extremely low relative to the prior art. [Solution] In this method for forming a film, sputtering is performed using a carbon target 4 by supplying the target with electric power in a state in which a leakage magnetic field Mf is applied to the target surface, and a carbon film is formed on the surface of a processing object. At this time, the region of the target surface on which the leakage magnetic field is applied is localized, and the region in which the leakage magnetic field is applied is periodically changed so as to move relative to the target from a starting point on the target surface and periodically return to the starting point. In addition, the product of the average magnetic field strength of the leakage magnetic field at a predetermined position of the target surface and the electric power supplied to the target is 125 G∙kW or less.
Inventors:
KOHARI SHINJI (JP)
ITOH JUNICHI (JP)
FUSE KAZUSHI (JP)
HENMI MITSUNORI (JP)
ITOH JUNICHI (JP)
FUSE KAZUSHI (JP)
HENMI MITSUNORI (JP)
Application Number:
PCT/JP2016/003800
Publication Date:
May 26, 2017
Filing Date:
August 22, 2016
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
C23C14/35; C23C14/06
Foreign References:
| JPS63210006A | 1988-08-31 | |||
| JP2003098306A | 2003-04-03 | |||
| JP2011505496A | 2011-02-24 |
Attorney, Agent or Firm:
SEIGA PATENT AND TRADEMARK CORPORATION (JP)
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