Title:
METHOD FOR FORMING COPPER WIRING
Document Type and Number:
WIPO Patent Application WO/2006/035591
Kind Code:
A1
Abstract:
For the purpose of forming a copper wiring having excellent filling properties and adhesion to a foundation layer by a CVD process, a foundation layer composed of a V-containing or Ti-containing film is formed on a substrate surface, which is provided with a hole or the like, by a CVD process using a tetravalent amide-type vanadium organic metal gas as the raw material and tertiarybutylhydrazine or the like as the reducing gas, and a copper-containing film is formed thereon, thereby filling the hole or the like and forming a wiring. This forming method can be applied to the field of copper wiring in the semiconductor industry.
Inventors:
WATANABE MIKIO (JP)
ZAMA HIDEAKI (JP)
ZAMA HIDEAKI (JP)
Application Number:
PCT/JP2005/016712
Publication Date:
April 06, 2006
Filing Date:
September 12, 2005
Export Citation:
Assignee:
ULVAC INC (JP)
WATANABE MIKIO (JP)
ZAMA HIDEAKI (JP)
WATANABE MIKIO (JP)
ZAMA HIDEAKI (JP)
International Classes:
H01L21/3205; C07C49/92; C07F1/08; C23C16/18; C23C16/34; H01L21/28; H01L21/285; H01L21/768; H01L23/52
Domestic Patent References:
| WO2003038892A2 | 2003-05-08 |
Foreign References:
| JPH08222568A | 1996-08-30 | |||
| JP2003017437A | 2003-01-17 | |||
| JP2003522827A | 2003-07-29 | |||
| JPH11217673A | 1999-08-10 | |||
| JP2003292495A | 2003-10-15 | |||
| JP2003252823A | 2003-09-10 |
Attorney, Agent or Firm:
Exeo Patent & Trademark Company (Daishin Bldg. 2-6-2 Ebisunishi Shibuya-ku, Tokyo 21, JP)
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